Organic Charge-transfer Salts and the Component Molecules in Organic Transistors

Mori, Takehiko

doi:10.1246/cl.2011.428

Cited by 40 publications

(36 citation statements)

References 116 publications

(69 reference statements)

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“…These kind of diagrams could be useful guides for selection of appropriate components in order to obtain an optimum value of the mobility in FET circuits. [7,51,66,107,[127][128][129].…”

Section: Electrical Propertiesmentioning

confidence: 99%

Neutral Metal 1,2-Dithiolenes: Preparations, Properties and Possible Applications of Unsymmetrical in Comparison to the Symmetrical

2012

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This paper is an overview concerning the preparations and properties as well as possible applications of neutral (one component) metal 1,2-dithiolenes (and selenium analogues). The structural, chemical, electrochemical, optical and electrical behavior of these complexes depend strongly on the nature of ligand and/or the metal. The results of unsymmetrical in comparison to those of symmetrical complexes related to the properties of materials in the solid state are primarily discussed. The optical absorption spectra exhibit strong bands in the near IR spectral region ca. 700 to ca. 1950 nm. X-ray crystal structure solutions show that the complexes usually have square-planar geometry with S-S and/or M-S contacts. Some of them behave as semiconductors or conductors (metals) and are stable in air. The cyclic voltammograms at negative potentials are different from the corresponding potentials of tetrathiafulvalenes (TTFs). As a consequence, the LUMO bands occur at much lower levels than those of TTFs. Consequently, electrical measurements under conditions of field effect transistors exhibit n-type or ambipolar behavior. Illumination of materials with high power lasers exhibits non-linear optical behavior. These properties enable metal 1,2-dithiolene complexes to be classified as promising candidates for optical and electronic applications, (e.g., saturable absorbers, ambipolar inverters). OPEN ACCESSCrystals 2012, 2 763

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“…These kind of diagrams could be useful guides for selection of appropriate components in order to obtain an optimum value of the mobility in FET circuits. [7,51,66,107,[127][128][129].…”

Section: Electrical Propertiesmentioning

confidence: 99%

Neutral Metal 1,2-Dithiolenes: Preparations, Properties and Possible Applications of Unsymmetrical in Comparison to the Symmetrical

2012

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“…TCNQ is a typical, strong electron acceptor that is frequently used for level-alignment studies, in particular in conjunction with other organic materials. [14][15][16][17][18][19][20][21][22] To functionalize the interface between ZnO and TCNQ, we consider three organic SAMs: doubly reduced viologen (Vio), diamino-4-phenyl-pyridine (DAPP), and 2,5-paraphenylpyridine (PPP). These three molecules, whose chemical structures are shown in Figure 3, are listed here in order of their increasing ionization potential (decreasing HOMO, vide infra).…”

Section: Introductionmentioning

confidence: 99%

Band Bending Engineering at Organic/Inorganic Interfaces Using Organic Self‐Assembled Monolayers

Hofmann

Rinke

2017

Adv Elect Materials

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The electron acceptors receive charge from the semiconductor until their acceptor levels are energetically in resonance with the Fermi energy. The resulting ground-state charge transfer across the interface gives rise to the formation of a space-charge region and associated band bending. This space-charge region can affect the charge-transport properties across the interface and significantly weakens the binding between substrate and adsorbate. [8] The spatial extent and the magnitude of the band bending depend on the amount of charge-transfer from the bulk to the adsorbate as well as on the bulk doping concentration and profile. Experimentally, those parameters are often challenging to control and not always well known. Moreover, they are subject to change during device operation, e.g., due to migration of charged defects, impeding the long-term stability of (opto)electronic devices.When the electron affinity of the adsorbate is larger than the substrate's work function, i.e., when the lowest unoccupied molecular orbital (LUMO) is below the Fermi-energy (E F ) as schematically shown in Figure 1a, the bulk crystal donates electrons to the adsorbate. The ensuing dipole moment (ΔΦ) shifts the now partially occupied LUMO upward in energy until it is in resonance with the Fermi-energy. [9,10] The overall interface dipole, ΔΦ, is often divided into a band bending contribution ΔΦ BB (i.e., the long-range, quasi-parabolic potential within the substrate), and a surface-dipole contribution ΔΦ SD (the approximately linear potential change in the "empty" space between substrate and adsorbate), as indicated in Figure 1b. The relative contribution of ΔΦ BB and ΔΦ SD depends strongly on the doping concentration of the substrate. [8] In principle, for low doping concentrations and strong electron acceptors, band bending could be as large as the total band gap of the substrate (≈3.5 eV in ZnO). In practice, however, ΔΦ BB is almost always limited by the presence of defect states at or near the surface, such as oxygen vacancies, [11][12][13] provided they are present in sufficient concentrations.Since the type and concentration of these defects is difficult to control, band bending is typically hard to engineer. In this article, we use these defect states as an analogy to demonstrate a new concept that uses properly designed, covalently attached self-assembled monolayers (SAMs) to act like surface defects that limit band bending at desired values. In order to do so, the highest occupied molecular orbitals (HOMOs) of these SAMs need to lie within the band gap of the inorganic substrate. This Adsorbing strong electron donors or acceptors on semiconducting surfaces induces band bending, whose extent and magnitude are strongly dependent on the doping concentration of the semiconductor. This study applies hybrid density-functional theory calculations together with the recently developed charge reservoir electrostatic sheet technique to account for charge transfer from the bulk of the semiconductor to the interface. This study further...

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“…Electrode patterning was achieved by surface selective deposition (Fig. 12a) [103,106,107]. The organic M a n u s c r i p t CCR-D-15-00042 Valade 2015 -29-semiconductor layer was evaporated in the final step.…”

Section: Page 23 Of 40mentioning

confidence: 99%

TTF[Ni(dmit)2]2: From single-crystals to thin layers, nanowires, and nanoparticles

Valade¹,

de²,

Faulmann³

et al. 2016

Coordination Chemistry Reviews

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Organic Charge-transfer Salts and the Component Molecules in Organic Transistors

Cited by 40 publications

References 116 publications

Neutral Metal 1,2-Dithiolenes: Preparations, Properties and Possible Applications of Unsymmetrical in Comparison to the Symmetrical

Neutral Metal 1,2-Dithiolenes: Preparations, Properties and Possible Applications of Unsymmetrical in Comparison to the Symmetrical

Band Bending Engineering at Organic/Inorganic Interfaces Using Organic Self‐Assembled Monolayers

TTF[Ni(dmit)2]2: From single-crystals to thin layers, nanowires, and nanoparticles

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