Organic charge transfer complexes on graphene with ultrahigh near infrared photogain

Iqbal, Muhammad Ahsan; Cui, Menghua; Liaqat, Adeel; Faiz, Rakba; Hossain, Mongur; Wang, Xinsheng; Hussain, Sabir; Dang, Chunhe; Liu, Haining; Wen, Wen; Wu, Junxia; Xie, Liming

doi:10.1088/1361-6528/ab0608

Cited by 19 publications

(21 citation statements)

References 50 publications

(64 reference statements)

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“…[1][2][3][4][5][6][7][8][9][10][11][12] Organic compound/G hybrids are particularly interested in the related areas of photosensing because the optical/electronic properties of organic components can be adjusted facilely through structural modifications or intermolecular stacking to meet assorts of demands. [13][14][15][16][17][18][19][20][21][22][23][24][25][26] Furthermore, solution fabricating processes of these hybrids are easily scaled up with a low cost. And, excellent flexibilities of organic/G films are highly desired in foldable/wearable electronics.…”

Section: Introductionmentioning

confidence: 99%

Synergy between Fermi Level of Graphene and Morphology of Polymer Film Allows Broadband or Wavelength‐Sensitive Photodetection

Chen

et al. 2021

Adv Materials Inter

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Section: Introductionmentioning

confidence: 99%

Synergy between Fermi Level of Graphene and Morphology of Polymer Film Allows Broadband or Wavelength‐Sensitive Photodetection

Chen

et al. 2021

Adv Materials Inter

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“…Table S1, Supporting Information depicts the comparison in photoresponse performance of reported organic IR phototransistors and ours. [ 3,4,14,23,31,33,35–37 ]…”

Section: Resultsmentioning

confidence: 99%

“…The overall performance of the organic phototransistors is superior to the best reported organic IR phototransistors. [3,4,14,23,31,33,[35][36][37] This strategy provides an effective method for the fabrication of lowcost and high performance IR optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

High Performance Ternary Organic Phototransistors with Photoresponse up to 2600 nm at Room Temperature

Yang

Wang

et al. 2021

Adv Funct Materials

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Infrared (IR) photodetection is important for light communications, military, agriculture, and related fields. Organic transistors are investigated as photodetectors. However, due to their large band gap, most organic transistors can only respond to ultraviolet and visible light. Here high performance IR phototransistors with ternary semiconductors of organic donor/acceptor complex and semiconducting single‐walled carbon nanotubes (SWCNTs), without deep cooling requirements are developed. Due to both the ultralow intermolecular electronic transition energy of the complex and charge transport properties of SWCNTs, the phototransistor realizes broadband photodetection with photoresponse up to 2600 nm. Moreover, it exhibits outstanding performance under 2000 nm light with photoresponsivity of 2.75 × 106 A W−1, detectivity of 3.12 × 1014 Jones, external quantum efficiency over 108%, and high Iphoto/Idark ratio of 6.8 × 105. The device exhibits decent photoresponse to IR light even under ultra‐weak light intensity of 100 nW cm−2. The response of the phototransistor to blackbody irradiation is demonstrated, which is rarely reported for organic phototransistors. Interestingly, under visible light, the device can also be employed as synaptic devices, and important basic functions are realized. This strategy provides a new guide for developing high performance IR optoelectronics based on organic transistors.

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“…2D materials with ultrasmooth surfaces and atomic thicknesses are considered a sought‐after choice for interface charge trapping. The literature reports the integration of graphene and transition metal dichalcogenides with quantum dots (QDs) [ 10,21–24 ] and organic molecules/polymers [ 25–28 ] for photogating‐based photodetectors. For instance, a PbS/graphene hybrid field‐effect transistor (FET) reported a photoresponsivity of up to 10 5 A W −1 at 1.45 µm.…”

Section: Figurementioning

confidence: 99%

Ultralow‐Transition‐Energy Organic Complex on Graphene for High‐Performance Shortwave Infrared Photodetection

et al. 2020

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Room‐temperature, high‐sensitivity, and broadband photodetection up to the shortwave infrared (SWIR) region is extremely significant for a wide variety of optoelectronic applications, including contamination identification, thermal imaging, night vision, agricultural inspection, and atmospheric remote sensing. Small‐bandgap semiconductor‐based SWIR photodetectors generally require deep cooling to suppress thermally generated charge carriers to achieve increased sensitivity. Meanwhile, the photogating effect can provide an alternative way to achieve superior photosensitivity without the need for cooling. The optical photogating effect originates from charge trapping of photoinduced carriers at defects or interfaces, resulting in an extremely high photogain (106 or higher). Here, a highly sensitive SWIR hybrid photodetector, fabricated by integrating an organic charge transfer complex on a graphene transistor, is reported. The organic charge transfer complex (tetrathiafulvalene–chloranil) has an exceptional low‐energy intermolecular electronic transition down to 0.5 eV, with the aim of achieving efficient SWIR absorption for wavelengths greater than 2 µm. The photogating effect at the organic complex and graphene interface enables an extremely high photogain and a high detectivity of ≈1013 Jones, along with a response time of 8 ms, at room temperature for a wavelength of 2 µm.

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Organic charge transfer complexes on graphene with ultrahigh near infrared photogain

Cited by 19 publications

References 50 publications

Synergy between Fermi Level of Graphene and Morphology of Polymer Film Allows Broadband or Wavelength‐Sensitive Photodetection

Synergy between Fermi Level of Graphene and Morphology of Polymer Film Allows Broadband or Wavelength‐Sensitive Photodetection

High Performance Ternary Organic Phototransistors with Photoresponse up to 2600 nm at Room Temperature

Ultralow‐Transition‐Energy Organic Complex on Graphene for High‐Performance Shortwave Infrared Photodetection

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