Organic ArF bottom anti-reflective coatings for immersion lithography

Xiang, Zhong; Zhuang, Hong; Wu, Huixiang; Shan, Jianhui; Abdallah, Dave; Yin, Jian; Yao, Huirong; Gonzalez, Eleazar; Neisser, Mark

doi:10.1117/12.710669

Cited by 3 publications

(6 citation statements)

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“…The 193-nm k-values for these two blends are comparable to those reported for a dual-layer dry BARC system, i.e., 0.20 and 0.61. 3 For the purpose of comparing a dye-attached system, a dual-layer dye-attached BARC stack with 193-nm n/k of 1.60/0.19 and 1.63/0.39 gave very promising lithography as shown in section 3.6.…”

Section: Designed Experiments (Ie Blends Of Polymer Dye Crosslinkmentioning

confidence: 99%

“…A single-layer BARC may not provide adequate reflection control, with dual or other multilayer BARCs then becoming a preferred choice. 3,4,5 Multilayer BARCs can provide improvements in exposure latitude, DOF, and line edge roughness in addition to increased reflectance control. 4 This paper describes our efforts towards developing dual-layer light-sensitive developer-soluble BARCs that, when coupled with high-NA immersion technology, may give a) a possible alternative to dry BARCs for applications such as isolation/gate/contact layers and b) in some cases even a replacement for trilayer for front-end lithography.…”

Section: Introductionmentioning

confidence: 97%

“…Immersion will be required for producing sub-50 nm microchips. 3 Improved resolution and increased depth of focus (DOF) can be achieved by increasing the NA of the imaging lens and by using 193-nm immersion lithography to increase the effective NA. 4 Unfortunately, high NAs cause light to diffract at higher angles than low NAs, which results in increased reflectance.…”

Section: Introductionmentioning

confidence: 99%

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Dual-layer dye-filled developer-soluble BARCs for 193-nm lithography

Meador

Beaman

Stroud

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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A family of dye-filled developer-soluble bottom anti-reflective coatings (BARCs) has been developed for use in 193-nm microlithography. This new dye-filled chemical platform easily provides products covering a wide range of optical properties. The light-sensitive and positive-working BARCs use a transparent polymeric binder and a polymeric dye in a thermally crosslinking formulation, with the cured products then being photochemically decrosslinked prior to development. The cured BARC films are imaged and removed with developer in the same steps as the covering photoresist. Two dye-filled BARCs with differing optical properties were developed via a series of DOEs and then used as a dual-layer BARC stack. Lithography with this BARC stack, using a 193-nm resist, gave 150-nm L/S (1:1). A 193-nm dual-layer BARC stack (gradient optical properties) from the well-established dye-attached family of lightsensitive BARCs also gave 150-nm L/S (1:1) with the same resist. However, the latter provided much improved line shape with no scumming. The targeted application for light-sensitive dual-layer BARCs is high-numerical aperture (NA) immersion lithography where a single-layer BARC will not afford the requisite reflection control.

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Section: Designed Experiments (Ie Blends Of Polymer Dye Crosslinkmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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Dual-layer dye-filled developer-soluble BARCs for 193-nm lithography

Meador

Beaman

Stroud

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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“…3 BARC coated onto 20 Si-wafers at proper thickness and baked at 200 °C/90s on device showing. Sublimation materials were collected onto a "chilled" quartz wafer that is attached to the top of the baking chamber.…”

Section: Sublimation Testmentioning

confidence: 99%

“…The immersion lithography has been well documented as the choice of technology for 45nm node and beyond IC manufactures. 3 The large numerical aperture (NA) of lens leads to decrease in photoresist depth of focus (DOF) and planarization of substrate topography becomes extremely important for minimizing the concern of DOF. The immersion process for the small feature integration also creates other problems such as pattern collapse, blob defects and BARC compatibility with resist.…”

Section: Introductionmentioning

confidence: 99%

High-etch-rate low-bias bow outgassing BARC via-filling materials for 193-nm ArF lithographic process

Yao

Xiang

Yin

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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As critical dimensions in integrated circuit (IC) device fabrication continue to shrink to less than 90 nm, designing multi-functional organic bottom anti-reflective coating (BARC) materials has become a challenge. In this paper, we report novel high performance BARC materials that are simultaneously capable of controlling reflectivity, planarizing on substrate surface, low bias filling without forming voids, low outgassing, high etch selectivity with resists and broad compatibility with resists. The new materials comprise of a chromophore that absorbs at 193 nm to give anti-reflective properties. By intriguing design of the crosslinking system to minimize the amount of low molecular weight additives and the by-product formation in the curing process, low-bias and low sublimation filling without formation of voids are achieved. The filling properties, etch selectivity, lithographic and outgassing data of the new BARC materials will be presented.The novel via-filling BARC materials may find applications in next generation via-first dual damascene (DD) process, which combines palanarizing surface topography and antireflectivity into one step process using single layer BARC material. In another application, the reported low k ultra high etch rate BARC materials have demonstrated good resist compatibility in ArF immersion lithographic process.

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