2007
DOI: 10.1117/12.710669
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Organic ArF bottom anti-reflective coatings for immersion lithography

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Cited by 3 publications
(6 citation statements)
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“…The 193-nm k-values for these two blends are comparable to those reported for a dual-layer dry BARC system, i.e., 0.20 and 0.61. 3 For the purpose of comparing a dye-attached system, a dual-layer dye-attached BARC stack with 193-nm n/k of 1.60/0.19 and 1.63/0.39 gave very promising lithography as shown in section 3.6.…”
Section: Designed Experiments (Ie Blends Of Polymer Dye Crosslinkmentioning
confidence: 99%
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“…The 193-nm k-values for these two blends are comparable to those reported for a dual-layer dry BARC system, i.e., 0.20 and 0.61. 3 For the purpose of comparing a dye-attached system, a dual-layer dye-attached BARC stack with 193-nm n/k of 1.60/0.19 and 1.63/0.39 gave very promising lithography as shown in section 3.6.…”
Section: Designed Experiments (Ie Blends Of Polymer Dye Crosslinkmentioning
confidence: 99%
“…A single-layer BARC may not provide adequate reflection control, with dual or other multilayer BARCs then becoming a preferred choice. 3,4,5 Multilayer BARCs can provide improvements in exposure latitude, DOF, and line edge roughness in addition to increased reflectance control. 4 This paper describes our efforts towards developing dual-layer light-sensitive developer-soluble BARCs that, when coupled with high-NA immersion technology, may give a) a possible alternative to dry BARCs for applications such as isolation/gate/contact layers and b) in some cases even a replacement for trilayer for front-end lithography.…”
Section: Introductionmentioning
confidence: 97%
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“…3 BARC coated onto 20 Si-wafers at proper thickness and baked at 200 °C/90s on device showing. Sublimation materials were collected onto a "chilled" quartz wafer that is attached to the top of the baking chamber.…”
Section: Sublimation Testmentioning
confidence: 99%
“…The immersion lithography has been well documented as the choice of technology for 45nm node and beyond IC manufactures. 3 The large numerical aperture (NA) of lens leads to decrease in photoresist depth of focus (DOF) and planarization of substrate topography becomes extremely important for minimizing the concern of DOF. The immersion process for the small feature integration also creates other problems such as pattern collapse, blob defects and BARC compatibility with resist.…”
Section: Introductionmentioning
confidence: 99%