Advances in Resist Materials and Processing Technology XXV 2008
DOI: 10.1117/12.773400
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High-etch-rate low-bias bow outgassing BARC via-filling materials for 193-nm ArF lithographic process

Abstract: As critical dimensions in integrated circuit (IC) device fabrication continue to shrink to less than 90 nm, designing multi-functional organic bottom anti-reflective coating (BARC) materials has become a challenge. In this paper, we report novel high performance BARC materials that are simultaneously capable of controlling reflectivity, planarizing on substrate surface, low bias filling without forming voids, low outgassing, high etch selectivity with resists and broad compatibility with resists. The new mater… Show more

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