Selected Topics in Group IV and II–VI Semiconductors 1996
DOI: 10.1016/b978-0-444-82411-0.50124-8
|View full text |Cite
|
Sign up to set email alerts
|

Ordered phase in HgCdTe thin films grown by reactive deposition in RF mercury glow discharge

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2001
2001
2001
2001

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 5 publications
0
1
0
Order By: Relevance
“…It has been used the setup with self-contained working chamber which represents quasiclosed volume • (QCV) where the discharge excitation takes place and the processes of target sputtering and condensation of the sputtered material on the substrate are carried outs. Application of QCV allows controlling the pressure of saturated vapor of mercury in the wide range ( (5)(6)(7)(8) iO Torr) what greatly reduces condense contamination by residual gasses of the vacuum system.…”
Section: Experiments and Discussionmentioning
confidence: 99%
“…It has been used the setup with self-contained working chamber which represents quasiclosed volume • (QCV) where the discharge excitation takes place and the processes of target sputtering and condensation of the sputtered material on the substrate are carried outs. Application of QCV allows controlling the pressure of saturated vapor of mercury in the wide range ( (5)(6)(7)(8) iO Torr) what greatly reduces condense contamination by residual gasses of the vacuum system.…”
Section: Experiments and Discussionmentioning
confidence: 99%