The structure of MnHg1Te thin layers with x=O. 12-0. 19 deposited on CdTe substrates with (1 1 1) and (1 10) orientations has been investigated. The glow radio-frequency (RF) (Jl3 .56 MHz) discharge was excited according to the diode scheme in magnetic field. The process was carried out under Hg vapor pressure from 5 iO to 8 iO Torr with quasiclosed volume. The possibility of Hg vapour pressure regulation allowed to carry out reactive process of MnHgTe layers condensation. It has been shown. that RF sputtering of MnHgTe in mercury glow discharge permits to obtain epitaxial layers with perfect structure. Optimal values of substrate temperatures which lead to epitaxial growth are from 230 to 250°C. The carrier concentrations and their mobilities have been determined.
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