Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb structure of anodic alumina

Abstract

Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb structure of anodic alumina was synthesized through a gas reaction of Ga 2 O vapor with a constant ammonia atmosphere at 1273 K in the presence of nano-sized metallic indium catalysis. Atomic force microscopy, x-ray diffraction, Raman backscattering spectroscopy, scanning electron microscopy, and transmission electron microscopy indicate that the ordered nanostructure consists of single-crystalline hexagonal wurtzite GaN nanowires in the uniform pores of anodic alumina about 20 nm in diameter and 40-50 m in length. The growth mechanism of the ordered nanostructure is discussed. The photoluminescence spectrum of this nanostructure is also reported.

Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

“…controlled by the metal-organic/substrate compounds to synthesize homo/hetero-junctions [14,15]. These wire structures provide an opportunity to produce 1D systems for band-gap engineering and quantum confinement for lightemitting devices future applications [2][3][4][5][6][7]15]. It should be emphasized that, for the present results, no metals (like gold) were deposited to the substrate surface [14].…”

“…The way the TMGa molecule and InP substrate interact to leave an inner rod GaInP crystalline and an (Ga, In) inner ball structure is still an open question. The growth of micro/nano structures has been presented in the literature [1][2][3][4][5][6][7][13][14][15]. One of the proposed growth mechanism models, the vapor-liquid-solid (VLS) can be cited [4][5][6]14].…”

“…The growth of semiconducting wire (Ga,In)P family has been presented by using the laser ablation of a solid target [4][5][6]. Indium has been utilized as catalyst for growth of GaN nanowires [7]. To our knowledge, no one has published reports on the wire growth using an organometallic and an InP substrate as the feeding source for the GaInP wire growth.…”

Synthesis and characterization of one-dimensional GaN nanostructures

“…Its diameter was about 15 nm [9]. In other reports, GaN nanorods were prepared by using the mixture of Ga 2 O 3 and Ga as initial materials to react with NH 3 at high temperature when utilizing multi-holes Al 2 O 3 as template [10,11]. GaN nanorods were prepared by utilizing GaAs nanorods as template [12].…”

Plasmon resonant Au nanospheres and nanorods in anodic alumina matrix

“…Highly ordered PAA is a well-established material [2,3] that has been used by several groups over the past decade as a template for fabricating metal [4,5] and semiconductor [6,7] nanostructures of various materials. The structure of these PAA films is characterized as a closely packed regular array of hexagonal columnar cells.…”