Order and disorder in epitaxially grown CuInS2

Growth of CuInS2and CuIn5S8on Si(001) by the Multisource Evaporation Method

“…6,18) A film composed of CuIn 1:02 S 1:97 , which is very close to CuInS 2 , has peaks of only CuInS 2 as shown in Fig. 3(b), i.e.…”

“…From this viewpoint, studies of the epitaxial growth of CuInS 2 on Si(001) have been carried out. [3][4][5][6] However, films with a single phase chalcopyrite structure, which is usual in the bulk material, have never been grown, but the coexistence of a Cu-Au type phase with a chalcopyrite 4) or sphalerite 5) phase have been obtained. Considering the fact that the chalcopyrite phase is often obtained in polycrystalline films, 7) further studies to obtain epitaxial films with a single phase chalcopyrite structure must be done.…”

Characterization of Cu(In,Ga)S2 crystals grown from the melt

“…Therefore, it will be expected that the band gap energy of a solid solution of these compounds, Cu(In,Ga) S 2 , covers the above mentioned range of the optimum band gap for the top cell. There are many reports on the growth of CuInS 2 thin films on Si substrates [2][3][4][5][6][7][8][9][10][11][12]. Recently, the growth of CuGaS 2 and Cu(In,Ga)S 2 on Si has been reported [13][14][15][16].…”

EpitaxialCuIn1−xGaxS2on Si(111)Cieslak1, Hahn2, Metzner3 et al. 2007Phys. Rev. B

“…1 is metastable and has, for CIS, a formation energy only 2 meV /atom above the one of the chalcopyrite structure. 14 Hence, the reported coexistence of chalcopyrite-and CuAu-type structures in epitaxial CIS films [15][16][17] is explained by thermodynamic reasons. 15 For the case of CIGS, the appearance of the CuAu-type structure was examined by means of selected area electron diffraction.…”