Optoelectronic transport property measurements of an amorphous-silicon-passivated c-silicon wafer using non-contacting methodologies

Melnikov, Alexander; Halliop, Basia; Mandelis, Andreas; Kherani, Nazir P.

doi:10.1016/j.tsf.2012.03.102

Cited by 9 publications

(4 citation statements)

References 21 publications

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“…1 was generally longer than that of Sample No. 2, due to the higher effectiveness of amorphous-Si surface passivation than oxidation passivation [24]. The negative correlations of lifetime versus intensity observed in figure 4 are due to Auger recombination dominating the various carrier recombination processes at high injection levels.…”

Section: Resultsmentioning

confidence: 93%

“…Photocarrier radiometry (PCR) [16] and its imaging counter part lock-in carrierography [17], a frequency-domain (FD) photoluminescence (PL) based quantitative characterization technique that measures photocarrier density distributions, has been demonstrated to be capable of characterizing carrier recombination properties [18][19][20], mobility/diffusivity [21,22], ion implantation dose [23], junction properties [24,25], and trap states/activation energy [26,27] in various semiconductor materials and devices. However, PCR shares the same nonlinearity issues as other dynamic optical techniques, which may substantially compromise its theoretical rigor and measurement self-consistency and reliability.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Simultaneous determination of effective carrier lifetime and resistivity of Si wafers using the nonlinear nature of photocarrier radiometric signals

Sun¹,

Melnikov²,

Wang³

et al. 2018

J. Phys. D: Appl. Phys.

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A rigorous treatment of the nonlinear behavior of photocarrier radiometric (PCR) signals is presented theoretically and experimentally for the quantitative characterization of semiconductor photocarrier recombination and transport properties. A frequency-domain model based on the carrier rate equation and the classical carrier radiative recombination theory was developed. The derived concise expression reveals different functionalities of the PCR amplitude and phase channels: the phase bears direct quantitative correlation with the carrier effective lifetime, while the amplitude versus the estimated photocarrier density dependence can be used to extract the equilibrium majority carrier density and thus, resistivity. An experimental ‘ripple’ optical excitation mode (small modulation depth compared to the dc level) was introduced to bypass the complicated ‘modulated lifetime’ problem so as to simplify theoretical interpretation and guarantee measurement self-consistency and reliability. Two Si wafers with known resistivity values were tested to validate the method.

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Section: Resultsmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Simultaneous determination of effective carrier lifetime and resistivity of Si wafers using the nonlinear nature of photocarrier radiometric signals

Sun¹,

Melnikov²,

Wang³

et al. 2018

J. Phys. D: Appl. Phys.

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“…Among them the MFCA (modulated free carrier absorption) [1][2][3][4][5], PTR (photothermal radiometry) [6][7][8][9], PCR (photo− carrier radiometry) [10][11][12] and PA (photoacoustic) [13][14][15] methods are often used. Interpretation problem arises when one wants to compare experimental results even for the same silicon sample but obtained with different methods.…”

Section: Introductionmentioning

confidence: 99%

Influence of light intensity on the lifetime of carriers in silicon investigated by a photoacoustic method

Bychto

Maliński

2016

Opto-Electronics Review

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“…12 On the basis of a one-layer model, the main transport parameters such as bulk recombination lifetime, carrier ambipolar diffusion coefficient, and front-and back-surface recombination velocities have been evaluated for silicon wafers with various kinds of passivated or non-passivated surfaces. 12,14,15 Detailed theoretical descriptions of carrier-density waves (CDWs) in composite optoelectronic materials have been developed; 12 however, surface-layer and interface traps have not been considered, although their influence on the PCR signal may be significant. It is especially important to take free photoexcited carrier traps into consideration in the case of thin surface layers deposited on bulk c-Si under optical excitation with short (UV) wavelength, when the optical absorption length is comparable to the thin-layer thickness.…”

Section: Introductionmentioning

confidence: 99%

Effective interface state effects in hydrogenated amorphous-crystalline silicon heterostructures using ultraviolet laser photocarrier radiometry

Melnikov

Mandelis

Halliop

et al. 2013

Journal of Applied Physics

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Ultraviolet photocarrier radiometry (UV-PCR) was used for the characterization of thin-film (nanolayer) intrinsic hydrogenated amorphous silicon (i-a-Si:H) on c-Si. The small absorption depth (approximately 10 nm at 355 nm laser excitation) leads to strong influence of the nanolayer parameters on the propagation and recombination of the photocarrier density wave (CDW) within the layer and the substrate. A theoretical PCR model including the presence of effective interface carrier traps was developed and used to evaluate the transport parameters of the substrate c-Si as well as those of the i-a-Si:H nanolayer. Unlike conventional optoelectronic characterization methods such as photoconductance, photovoltage, and photoluminescence, UV-PCR can be applied to more complete quantitative characterization of a-Si:H/c-Si heterojunction solar cells, including transport properties and defect structures. The quantitative results elucidate the strong effect of a front-surface passivating nanolayer on the transport properties of the entire structure as the result of effective a-Si:H/c-Si interface trap neutralization through occupation. A further dramatic improvement of those properties with the addition of a back-surface passivating nanolayer is observed and interpreted as the result of the interaction of the increased excess bulk CDW with, and more complete occupation and neutralization of, effective front interface traps. V

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Optoelectronic transport property measurements of an amorphous-silicon-passivated c-silicon wafer using non-contacting methodologies

Cited by 9 publications

References 21 publications

Simultaneous determination of effective carrier lifetime and resistivity of Si wafers using the nonlinear nature of photocarrier radiometric signals

Simultaneous determination of effective carrier lifetime and resistivity of Si wafers using the nonlinear nature of photocarrier radiometric signals

Influence of light intensity on the lifetime of carriers in silicon investigated by a photoacoustic method

Effective interface state effects in hydrogenated amorphous-crystalline silicon heterostructures using ultraviolet laser photocarrier radiometry

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