2016
DOI: 10.1515/oere-2016-0008
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Influence of light intensity on the lifetime of carriers in silicon investigated by a photoacoustic method

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“…Paper [3] presents the influence of light intensity on the lifetime of carriers in n-type silicon investigated by a PA method. The character of the dependence was interpreted in terms of Shockley Read Hall (SRH) statistics.…”
Section: Introductionmentioning
confidence: 99%
“…Paper [3] presents the influence of light intensity on the lifetime of carriers in n-type silicon investigated by a PA method. The character of the dependence was interpreted in terms of Shockley Read Hall (SRH) statistics.…”
Section: Introductionmentioning
confidence: 99%