Optoelectronic switching of nanowire-based hybrid organic/oxide/semiconductor field-effect transistors

Baek, Eunhye; Pregl, Sebastian; Shaygan, Mehrdad; Römhildt, Lotta; Weber, Walter M.; Mikolajick, Thomas; Ryndyk, Dmitry A.; Baraban, Larysa; Cuniberti, Gianaurelio

doi:10.1007/s12274-014-0608-7

Cited by 33 publications

(25 citation statements)

References 42 publications

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“…In the former technique, the charge of the molecules in the metal gate periphery is selectively reflected in a GaAs nanowire current owing to the metal gate-molecule capacitive coupling. The semiconductor-based nanowire has a good potential for a high-speed charge detector, because of high sensitivity to surface charge [14][15][16][17][18] . In particular, the GaAs-based nanowire possesses a high-speed response capability owing to the high electron mobility 19) .…”

Section: Introductionmentioning

confidence: 99%

Detection of charge dynamics of a tetraphenylporphyrin particle using GaAs-based nanowire enhanced by particle–metal tip capacitive coupling

Okamoto¹,

Sato²,

Sasaki³

et al. 2017

Jpn. J. Appl. Phys.

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We investigate a detection technique of charge dynamics of a molecular particle using a GaAs-based nanowire where the charge sensitivity is locally enhanced by particle-metal tip capacitive coupling. By equivalent circuit analysis, it was clarified that the nanowire channel potential becomes sensitive to the molecular particle on the nanowire when the particle is capacitively coupled with a metal tip. The concept was demonstrated using a GaAs-based nanowire with tetraphenylporphyrin (TPP) particles on its surface and a measurement system integrating an atomic force microscope (AFM) and a dynamic current measurement monitor/spectrum analyzer. When the metal tip was in contact with a TPP particle on the nanowire under an appropriate tip bias condition, random telegraph signal (RTS) noise was imposed on the nanowire current, suggesting the increase in sensitivity to the charge state of the particle by the metal tip contact. We discussed the origin of the RTS noise through analysis of the time constant of RTS noise, RTS amplitude, and noise spectrum.

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Section: Introductionmentioning

confidence: 99%

Detection of charge dynamics of a tetraphenylporphyrin particle using GaAs-based nanowire enhanced by particle–metal tip capacitive coupling

Okamoto¹,

Sato²,

Sasaki³

et al. 2017

Jpn. J. Appl. Phys.

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“…We have recently proven that the Schottky junctions do not impair the sensitivity of the devices, since near Nernstian sensitivity can be reached [32]. As demonstrated recently [8,[32][33][34][35], such multi-wire devices, assembled using a thin-film-transistor (TFT) format, reveal remarkably high output currents (up to~mA) preserving the high on-to-off current ratio (in average up to~10 6 ), which greatly outperform the single wire FET, mostly employed for biosensor measurements [33]. Thus, devices connected by NW arrays are able to deliver a broader dynamic range for the measurements and lower device-to-device variation in current and sensitivity due to the averaging of the different signals coming from the individual wires [36,37].…”

Section: Introductionmentioning

confidence: 79%

Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors

et al. 2018

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Abstract:We present a biosensor chip with integrated large area silicon nanowire-based field effect transistors (FET) for human α-thrombin detection and propose to implement the hysteresis width of the FET transfer curve as a reliable parameter to quantify the concentration of biomolecules in the solution. We further compare our results to conventional surface potential based measurements and demonstrate that both parameters distinctly respond at a different analyte concentration range. A combination of the two approaches would provide broader possibilities for detecting biomolecules that are present in a sample with highly variable concentrations, or distinct biomolecules that can be found at very different levels. Finally, we qualitatively discuss the physical and chemical origin of the hysteresis signal and associate it with the polarization of thrombin molecules upon binding to the receptor at the nanowire surface.

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“…Besides the examples given in this chapter, there are many more potential applications like optical devices [142,143], thermoelectric devices [144], catalysts [145] and even more [146]. It is therefore expected that silicon nanowire technology will evolve as a very versatile supplement to the existing silicon technology.…”

Section: Discussionmentioning

confidence: 99%

Silicon Nanowires: Fabrication and Applications

Mikolajick

Weber

2015

NanoScience and Technology

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Due to the high surface to volume silicon ratio and unique quasi onedimensional electronic structure, silicon nanowire based devices have properties that can outperform their traditional counterparts in many ways. To fabricate silicon nanowires, in principle there are a variety of different approaches. These can be classified into top-down and bottom-up methods. The choice of fabrication method is strongly linked to the target application. From an application point of view, electron devices based on silicon nanowires are a natural extension of the downscaling of a silicon metal insulator semiconductor transistor. However, the unique properties also allow implementing new device concepts like the junctionless transistor and new functionalities like reconfigurability on the device level. Sensor devices may benefit from the high surface to volume ratio leading to a very high sensitivity of the device. Also, solar cells and anodes in Li-ion batteries can be improved by exploiting the quasi one-dimensionality. This chapter will give a review on the state-of-the-art of silicon nanowire fabrication and their application in different types of devices.

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Optoelectronic switching of nanowire-based hybrid organic/oxide/semiconductor field-effect transistors

Cited by 33 publications

References 42 publications

Detection of charge dynamics of a tetraphenylporphyrin particle using GaAs-based nanowire enhanced by particle–metal tip capacitive coupling

Detection of charge dynamics of a tetraphenylporphyrin particle using GaAs-based nanowire enhanced by particle–metal tip capacitive coupling

Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors

Silicon Nanowires: Fabrication and Applications

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