Optoelectronic device based on lithium niobate nanofilms deposited at various pulsed laser wavelengths

In this study, In2O3 thin films deposited on porous silicon using the pulsed laser deposition (PLD) method. The PSi substrate was prepared by photo electrochemical etching with the diode laser assistant. The impacts of various laser wavelengths on structural, spectroscopic, and performance characterizations were investigated. XRD revealed that the In2O3/PSi films have a polycrystalline cubic structure. The PL test showed measurements of two emission peaks related to In2O3 films (500, 463, 460 nm) and the PSi membrane (857, 852, 829 nm). The peaks at shorter wavelengths increased the energy gap from 2.4 eV to 2.69 eV. AFM results showed the surface roughness of the prepared samples were (3.78, 2.74, 2.3 nm), respectively and the root mean square (4.47, 3.26, 3.12 nm), respectively. FESEM images illustrated that the prepared samples had an average diameter size of (34.51, 25.55, 29.44 nm) with a cauliflower-like shape at 355 nm and rod-shaped particles for both 532 and 1064 nm. EDX tests were performed to figure out the elemental composition of In2O3/PSi the concentrations. The longer the laser wavelength, the higher the concentration of indium. The highest laser wavelength increased the transmission while decreasing the absorption.

Section: Advantages Of In2o3mentioning

confidence: 99%

Physical Investigations of In2O3/Porous Silicon at Different Laser Wavelengths

Dua’a R. T. Alrayyes,

Makram A. Fakhri,

Ali A. Alwahib

et al. 2024

“…In2O3 can be easily synthesized using various methods, including sol-gel, hydrothermal, and coprecipitation method [10,11]. The material characteristics are heavily influenced by synthesis techniques corresponding to the process parameters of deposition [12,13] there are many techniques and procedures for producing a thin film [14,15]: chemical spray pyrolysis (CSP), chemical vapor deposition (CVD), sputtering technique, sol-gel method, thermal pyrolysis deposition (TPD), thermal evaporation in vacuum deposition. (TEVD) and pulse laser deposition (PLD) [16][17][18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Optical Investigation of In2O3/ Quartz Nano-films Deposited at Different Laser Energies

Dua’a R. T. Alrayyes,

Ali A. Alwahib,

Makram A. Fakhri

et al. 2024

The study conducted in this research focuses on the deposition of In2O3 thin films onto quartz substrates using the pulsed laser deposition technique (PLD). The importance of this study lies in the exploration of the optical properties of these thin films under varying laser energies (1200 mJ, 1400mJ, 1600mJ, 1800 mJ, and 2000 mJ), and the subsequent determination of their energy band gaps. In the pursuit of enhancing our understanding of In2O3 thin films, this research exhibits a direct relationship between the laser energy and laser band gap. It was discovered that the energy band gap of thin In2O3 films increased due to the increase in laser energy. This phenomenon resulted in an overall blue shift from the fundamental energy gap of In2O3 thin films. The significance of this study extends to potential applications in various fields. In2O3 thin films with tunable energy band gaps can find applications in optoelectronics, photovoltaic and other emerging technologies. This research not only contributes to the fundamental understandings of thin film properties but also offers a pathway for tailoring their characteristics for specific applications, thus advancing the field of materials science and engineering.

“…Several research studies have endeavored to create GaN nanostructures using different growth techniques, such as metal-organic chemical vapor deposition [20], reactive molecular beam epitaxy [21], thermal ammonization [22,23], physical vapor deposition [24,25], chemical vapor deposition (CVD) [26], sol-gel chemistry [27],…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of Gallium Nitride Heterostructures Grown on Quartz Using Pulse Laser Deposition Method

Abeer R. Abbas,

Makram A. Fakhri,

Motahher A. Qaeed

et al. 2024

An optical analysis was conducted on a Gallium nitride (GaN) thin film grown on a quartz substrate using the physical vapor deposition technique (PVD), specifically, pulsed laser deposition (PLD). The film was grown using different laser wavelengths (1064, 532, and 355) nm from a Q-switch neodymium-doped yttrium aluminum garnet (Nd: YAG) laser, all performed under a vacuum pressure of 10-2 m bar. The absorption coefficient of the GaN thin film was determined by performing UV-Vis diffused spectroscopy at room temperature and measuring wavelengths ranging from 200 to 1000 nm. The absorption peak occurs at 227 nm when the wavelength is 1064 nm, at 217 nm when the wavelength is 532 nm, and at 222 nm when the wavelength is 355 nm. The optical energy gap is a crucial statistic for analyzing the properties of thin films and assessing their potential as gas sensors. The value of the direct energy gap (Eg) for the prepared films was established by analyzing the graph that shows the relationship between (α h) and the energy gap (ev) values at different wavelengths. The energy values were determined to be 3.36 eV, 3.62 eV, and 3.7 eV for 1064, 532, and 355 nm wavelengths, respectively.