2011 21st International Conference on Noise and Fluctuations 2011
DOI: 10.1109/icnf.2011.5994330
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Optoelectronic 1/f noise of Avalanche Photodiodes (AlInAs/GaInAs/InP) dedicated to photonic instrumentation and telecommunication

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Cited by 3 publications
(7 citation statements)
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“…The same behavior has been shown in a previous work talking about 1/f noise in InGaAs/AlInAs/InP APD's [7].…”
Section: B Noise Spectral Density Versus Frequencysupporting
confidence: 87%
“…The same behavior has been shown in a previous work talking about 1/f noise in InGaAs/AlInAs/InP APD's [7].…”
Section: B Noise Spectral Density Versus Frequencysupporting
confidence: 87%
“…Other noise sources such as optical shot noise, obscurity current shot noise, fiber thermal noise and input polarization noise are also present but are generally less significant and will be negligible [2], [3].…”
Section: Optical Intensity and Frequency Fluctuationsmentioning
confidence: 98%
“…To obtain a sufficient high Sensitivity S AO (nm/Pa), it is necessary to increase acousto mechanic S AM (nm/Pa) as shown in the relation ship (2) in §2-C. The acousto mechanic simulation shows the membrane thickness e(mm) must be ajusted by using the values given in Fig.7.…”
Section: B Noise Equivalent Power Versus Membrane Thicknessmentioning
confidence: 99%
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