1/f noise of MWIR Hg_0.7Cd_0.3 Te eAPD's used in a focal plane array

Abstract

We show for the first time, the results concerning low frequency noise (1Hz-1KHz) of Avalanche Photodiodes (eAPDs) HgCdTe manufactured on Cadmium Telluride Substrate (CdTe). 1/f and multiplication noises are increasing as a function of the multiplication coefficient with the same variation. This specific behavior is explained taking into account the physical properties of eAPDs, electron avalanche multiplication coefficient and excess noise slope coefficient versus dark current. Noise Equivalent Power of median wave infrared optoelectronic detector is proposed taking account into 1/f noise which is predominant in this optical bandwidth.