Opto-electronic properties of poly-crystalline La doped BaSnO₃ films deposited on quartz substrates

Abstract

Highly conducting and transparent thin films of La x Ba1 − x SnO3 (x = 0, 0.01 and 0.05) were grown on quartz substrates via pulsed laser deposition. Conductivity increases in orders of magnitude upon vacuum annealing of the as–deposited films. This is attributed to the significant enhancement in carrier concentration due to the increased oxygen vacancy defects (V O ∙ ∙ ). Enhanced carrier concentration improves the metallicity in the films at room temperature. Metal to semiconductor transition (MST) is observed in the films with n e ⩾ 1019 cm−3 at low temperatures. The MST shifts towards absolute zero temperature as the carrier concentration in the film increases. Low–temperature resistivity analysis suggests that the charge transport is mainly governed by strong electron–electron interaction. UV–Vis spectroscopy confirms a 60%–80% transmittance in the visible range (400–800 nm) for all the films. Due to the large change in carrier concentration, Burstein Moss (BM) shift is observed, and the bandgap ranges between 3.65–3.98 eV. The effective mass of electron and refractive index estimated from the BM shift and transmittance are found to be 0.6 m e and 2, respectively.

Design and Simulation of Cs2BiAgI6 Double Perovskite Solar Cells with Different Electron Transport Layers for Efficiency Enhancement

“…The partial absorption of a thicker ETL slows down the charge generation and collection pace and may cause a slight decline in J SC and PCE eq shows the relation between the ETL layer thickness and transmittance α normale = 1 d normale 0.25em ln nobreak0em.25em⁡ 1 T normale where d e stands for the film thickness, T e stands for the transmittance, and α e denotes the absorption coefficient.…”

Harnessing the potential of CsPbBr3-based perovskite solar cells using efficient charge transport materials and global optimization

“… 60 Eqn (4) depicts the relationship between thickness and transmittance. 68 Here, the absorption coefficient is α , the layer thickness is d , and the transmittance is T .…”

Structure Modification, Evolution, and Compositional Changes of Highly Conductive La:BaSnO3 Thin Films Annealed in Vacuum and Air Atmosphere

“…This did not lead to a radical increase in thin film properties. However, the electrical properties of the films were improved in the temperature range of 500–900 °C [ 8 , 9 , 10 , 11 ]. Thin films annealed in a vacuum showed an increase in carrier mobility and carrier concentration.…”