Opto-electronic behavior of LN as a dielectric films: Improved using low temperatures treatment

The study conducted in this research focuses on the deposition of In2O3 thin films onto quartz substrates using the pulsed laser deposition technique (PLD). The importance of this study lies in the exploration of the optical properties of these thin films under varying laser energies (1200 mJ, 1400mJ, 1600mJ, 1800 mJ, and 2000 mJ), and the subsequent determination of their energy band gaps. In the pursuit of enhancing our understanding of In2O3 thin films, this research exhibits a direct relationship between the laser energy and laser band gap. It was discovered that the energy band gap of thin In2O3 films increased due to the increase in laser energy. This phenomenon resulted in an overall blue shift from the fundamental energy gap of In2O3 thin films. The significance of this study extends to potential applications in various fields. In2O3 thin films with tunable energy band gaps can find applications in optoelectronics, photovoltaic and other emerging technologies. This research not only contributes to the fundamental understandings of thin film properties but also offers a pathway for tailoring their characteristics for specific applications, thus advancing the field of materials science and engineering.

Section: Uv-visible Spectroscopymentioning

confidence: 99%

Optical Investigation of In2O3/ Quartz Nano-films Deposited at Different Laser Energies

Dua’a R. T. Alrayyes,

Ali A. Alwahib,

Makram A. Fakhri

et al. 2024

“…The XRD shows two peaks, one for the silicon at 2θ = 27• and the other for the PSi adhenished with the silicon at 2θ = 28.02 o , related to ( 200) and ( 200) planes, respectively. The crystallite size of In2O3 can be calculated by using the Scherrer equation [39][40][41].…”

Section: Crystalline Characteristics (Xrd)mentioning

confidence: 99%

Physical Investigations of In2O3/Porous Silicon at Different Laser Wavelengths

Dua’a R. T. Alrayyes,

Makram A. Fakhri,

Ali A. Alwahib

et al. 2024

In this study, In2O3 thin films deposited on porous silicon using the pulsed laser deposition (PLD) method. The PSi substrate was prepared by photo electrochemical etching with the diode laser assistant. The impacts of various laser wavelengths on structural, spectroscopic, and performance characterizations were investigated. XRD revealed that the In2O3/PSi films have a polycrystalline cubic structure. The PL test showed measurements of two emission peaks related to In2O3 films (500, 463, 460 nm) and the PSi membrane (857, 852, 829 nm). The peaks at shorter wavelengths increased the energy gap from 2.4 eV to 2.69 eV. AFM results showed the surface roughness of the prepared samples were (3.78, 2.74, 2.3 nm), respectively and the root mean square (4.47, 3.26, 3.12 nm), respectively. FESEM images illustrated that the prepared samples had an average diameter size of (34.51, 25.55, 29.44 nm) with a cauliflower-like shape at 355 nm and rod-shaped particles for both 532 and 1064 nm. EDX tests were performed to figure out the elemental composition of In2O3/PSi the concentrations. The longer the laser wavelength, the higher the concentration of indium. The highest laser wavelength increased the transmission while decreasing the absorption.

“…Additionally, the effective charge transfer in solar cells and photodetectors is made possible by this large surface area. Porous silicon has distinct optical characteristics [36][37][38].…”

Section: Introductionmentioning

confidence: 99%

Physical Investigations of GaN/Porous Silicon at Different Laser Wavelengths

Rusul S. Rashed,

Makram A. Fakhri,

Ali A. Alwahib

et al. 2024

In this study, we prepared PSi using the laser-assisted electrochemical etching method and deposited Gallium nitride (GaN) on the PSi substrate using the pulsed laser technique at different pulsed laser wavelengths (1064, 532, and 355 nm). We investigated the optical, structural, topographical, and morphological properties of Gallium Nitride on the substrate PSi by various pulsed laser wavelengths. The X-Ray Diffraction (XRD) analysis revealed that gallium nitride on PSi was polycrystalline and hexagonal, cubic structural at 532 nm, with a high peak intensity and crystallite size at 2θ=36.96°and 57.80 related to (101) and (110) planes, respectively, while the c-GaN phase is observed at 2θ = 25.43 degrees and is reflected from the (200) plane. PL shows two emission peaks were observed for the GaN film (430,345,413 nm) and the PSi substrate (867,891,876 nm), and the energy gap increased as the wavelength decreased. The field emission scanning electron microscopy (FESEM) pictures revealed that the synthetic sample had an average size of 24.45, 23.91, and 21.30 nm, and the nanoparticles appeared spherical and similar to cauliflower. The atomic force microscopy (AFM) results showed that the average roughness was 7.62, 10.64, and 13.62 nm, respectively, and it was observed the root mean square increased as a result of the uniform distribution of high-quality crystals and the excellent quality of the crystal structure. The UV-Visible (UV) results showed that the transmission decreased with a decrease in wavelength, and the absorption was inversely proportional to the transmission.