2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) 2012
DOI: 10.1109/iscdg.2012.6360033
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Optimum transistor sizing for low-power subthreshold standard cell designs

Abstract: This paper presents a simple method for standard cell optimization in the subthreshold regime. Through proper dimensioning of the transistor length and width an improved symmetric propagation delay and a reduction in dynamic power consumption compared to conventional CMOS standard cell implementations is achieved. The performance of the presented cells has been verified using logic gate arrays and ring oscillators with high number of stages. The measurement results reasonably agree with simulation data.

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Cited by 3 publications
(2 citation statements)
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“…So in order to overcome such disadvantages and trade-offs, Sub threshold conduction arrives, in which the circuit start conduction within the sub threshold region before input voltage reaches the threshold voltage. The relationship between W/L and source drain current is equally simple [9]. As the channel width increases, more carriers are available to conduct current.…”
Section: Subthreshold Conductionmentioning
confidence: 99%
“…So in order to overcome such disadvantages and trade-offs, Sub threshold conduction arrives, in which the circuit start conduction within the sub threshold region before input voltage reaches the threshold voltage. The relationship between W/L and source drain current is equally simple [9]. As the channel width increases, more carriers are available to conduct current.…”
Section: Subthreshold Conductionmentioning
confidence: 99%
“…For an optimal dimensioning, the technique presented in [4] and [5] is applied. The reverse short channel effect is ex ploited in order to modulate the threshold voltage for an optimal subthreshold operation.…”
Section: Implementation With Subthreshold Logicmentioning
confidence: 99%