Optimizing the power confinement in silicon slot waveguides by use of finite element method

Leung, D. M. H.; Kan, Xuefen; Rahman, B. M. A.; Kejalakshmy, N.; Grattan, K. T. V.

doi:10.1117/12.904947

Cited by 3 publications

(3 citation statements)

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“…In the optics and photonics area, silicon-on-insulator (SOI) based nanowires are used as a waveguide in many sensing applications [4][5][6][7][8]. The SOI technology has been used in optical sensors because it has the advantage of improving the light confinement in the waveguide, thus sensitivity of the sensors is enhanced [9,10]. However, polymer nanowires are alternatively used as optical waveguides nowadays in sensing applications due to their mechanical flexibility over the semiconductor nanowires such as silicon nanowires.…”

Section: Introductionmentioning

confidence: 99%

Characterization of polymer nanowires fabricated using the nanoimprint method

Viphavakit

Atthi²,

Boonruang

et al. 2014

Nanophotonics V

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This is the accepted version of the paper.This version of the publication may differ from the final published version. Permanent repository link ABSTRACTIn this paper, an ormocomp polymer nanowire with possible use in integrated-optics sensing applications is presented. We discuss the structure design, the fabrication process and present results of the simulation and characterization of the optical field profile. Since the nanowires are designed and intended to be used as integrated optics devices, they are attached to tapered and feed waveguides at their ends. The fabrication process in this work is based mainly on the nanoimprint technique. The method assumes a silicon nanowire as an original pattern, and polydimethylsiloxane (PDMS) as thesoft mold. The PDMS mold is directly imprinted on the ormocomp layer and then cured by UV light to form the polymer based nanowire. The ormocomp nanowires are fabricated to have various dimensions of width and length at a fixed 500nm thickness. The length of the nanowires is varied from 250 m to 2 mm, whereas the width of the structures is varied between 500nm and 1m. The possible optical mode field profile that occurs in the proposed polymer nanowire design is studied using the H-field finite element method (FEM). In the characterization part, the optical field profile and the intensity at the device output are the main focus of this paper. The various lengths of the nanowires show different characteristics in term of output intensity. An image processing is used to process the image to obtain the intensity of the output signal. A comparison of the optical field and output intensity for each polymer nanowire is also discussed.

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Section: Introductionmentioning

confidence: 99%

Characterization of polymer nanowires fabricated using the nanoimprint method

Viphavakit

Atthi²,

Boonruang

et al. 2014

Nanophotonics V

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“…Conventional semiconductor nanowires, such as, silicon nanowires are widely used in sensing applications because their electrical response can be influenced by the change of the chemical environment [4]. In optics and photonics, silicon-oninsulator (SOI) based nanowires have been used as optical sensors because they have the advantage of high index contrast and low optical power losses [5][6][7][8][9][10]. Recently, polymer nanowires are alternatively being used as optical waveguides in sensing applications due to their attractive features.…”

Section: Introductionmentioning

confidence: 99%

Realization of a polymer nanowire optical transducer by using the nanoimprint technique

et al. 2014

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This is the accepted version of the paper.This version of the publication may differ from the final published version. An optical transducer using an integrated optics polymer nanowire is proposed. The nano-imprint technique is used to fabricate the ormocomp nanowire with 1.0 µm width and 0.5 µm height but the resulting sidewalls are not perfectly vertical. Maximum sensitivity is achieved by enhancing the evanescent field in the cladding region. The possible mode fields and power confinement of the nanowire are studied with respect to their structural dimensions, the operating wavelength and the cladding material by using the H-field FEM. The attenuation coefficient is extracted and calculated over the different cladding mediums, specifically air, water, and glycerol solution. It is observed that the scattering caused due to the surface roughness is the dominant effect that provides a larger attenuation coefficient. Permanent repository link

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“…The SOI technology has been attractive for its high index contrast and low optical power losses [16][17][18]. The silicon nanowire optical sensors detect the change of effective index from the light confined in the guiding area which occurs either due to the change of the refractive index of the cladding medium, known as homogeneous sensing, or exploiting the change of a thin layer structure on the waveguide surface called surface sensing [17].…”

Section: Introductionmentioning

confidence: 99%