Optimized Selective‐Area p‐Type Diffusion for the Back‐Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process

Abstract

Herein, an alternative approach of selective‐area zinc diffusion technique by single rapid thermal diffusion (RTD) using a Zn3P2/Zn/SiO2 multilayer structure is proposed to realize p‐type doping in the InP cap so as to fabricate planar InGaAs/InP avalanche photodiodes (APDs). Through the optimization of selective‐area zinc diffusion in the InP cap, a low dark current, high responsivity, fast transient response, and high reliability near‐infrared back‐illuminated planar InGaAs/InP APD is obtained, which demonstrates a simple and efficient method for the development of high‐performance planar InGaAs/InP APD focal plane arrays.

AlGaN-based solar-blind UV heterojunction bipolar phototransistors: structural design, epitaxial growth, and optoelectric properties

“…However, generally, the transient response usually presents a slower decay time due to the physical processes such as relaxation, capture and re-release by defect energy levels, and so on. 34 In order to intuitively exhibit the comprehensive performance of our AlGaN-based solar-blind UV HBPT, parameter comparison with the reported AlGaN-based solar-blind UV photodetectors is shown in Table 1.…”

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

“…Then, Yiren Chen et al [ 94 ] proposed the selective-area p-type diffusion method to form the back-side illuminated device, which is clearly observed in Figure 41 . Single RTD in N 2 atmosphere using a Zn 3 P 2 /Zn/SiO 2 multilayer structure is adopted to realize p-type doping in the InP cap.…”