AlGaN-based solar-blind UV heterojunction bipolar phototransistors: structural design, epitaxial growth, and optoelectric properties

Abstract

The structure of the AlGaN-based solar-blind UV heterojunction bipolar phototransistor (HBPT) with an AlGaN-based multiple quantum wells (MQWs) layer as the light absorption layer is proposed in this paper. On...

High-performance (Al0.4Ga0.6)2O3/Al0.32Ga0.68N-based UVC/UVB tunable dual-band photodetectors

“…Recently, wide-bandgap semiconductors have been considered as potential alternatives for UV PDs, 1,3,13 and ternary compound materials like AlGaN and MgZnO have drawn considerable attention. 14–17 The bandgap of AlGaN can be modulated in the range of 3.4–6.2 eV, enabling AlGaN-based PDs to detect deep-ultraviolet (DUV, 200–280 nm), UVB and UVA light. In general, the Al composition of Al x Ga 1− x N must be over 40% to effectively fabricate DUV PDs, whereas the decisive difficulty in epitaxially growing high-Al-content AlGaN with high crystalline quality remains challenging, which is ascribed to structural defects derived from the lattice mismatch and thermal expansion mismatch in the epitaxial structure.…”

Self-Powered FTO/CdSe/Bi2Se3 Photodetector with Bipolar Photoresponse Characteristics

“…With the continuous advancement of information technology, the demand for photoelectric detection is rapidly increasing. − To meet the needs of different application fields, photodetectors based on different structures such as positive-negative (PN), positive-intrinsic-negative (PIN), and metal-semiconductor (MS) junctions have been constructed. Most photodetectors can only produce unidirectional photoelectric signals for specific wavelengths of light, limiting their versatility. − Bipolar photoresponse detectors offer advantages in terms of integration and multifunctionality due to their bipolar output capability and hold promise for applications in biosensors, optical logic gates, and artificial synapse simulation. − …”

Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio

“…[ 10,11 ] Recent development of wide bandgap semiconductors such as MgZnO, AlGaN, and Ga 2 O 3 allow to realize solar‐blind photodetection without optical filters. [ 12–21 ] Among them, Ga 2 O 3 is considered as an ideal candidate due to its suitable bandgap (≈4.8 eV), high thermal stability, and large absorption coefficient. In real applications, the detected solar‐blind signals are generally weak due to severe environmental absorption, and thus most solar‐blind photodetectors require high responsivity ( R ) and high photo‐to‐dark current ratio (PDCR) to enhance the detection quality and sensitivity.…”