Optimized Growth of Gallium Oxide Thin Films Using Different Synthesis Processes

Optimizing the Stoichiometry of Ga2O3 Grown by RF‐Magnetron Sputter Deposition by Correlating Optical Properties and Growth Parameters

“…Ga 2 O 3 thin films may be prepared by various methods, including molecular beam epitaxy (MBE), [ 18–20 ] metal‐organic chemical vapor deposition (MOCVD), [ 21 ] pulsed laser deposition (PLD), [ 11,22 ] sol gel, [ 23,24 ] chemical vapor deposition (CVD), [ 25–27 ] and sputtering techniques. [ 15,17,28,29,30,31 ] The reported growth rates of stoichiometric Ga 2 O 3 thin films are comparatively low. Typical growth rates of Ga 2 O 3 thin films grown by MBE and PLD are 0.04 [ 20 ] to 0.09 [ 32 ] and 0.22 μm h −1 , [ 33 ] respectively.…”

Recent progress on the effects of impurities and defects on the properties of Ga2O3

“…, metal–organic chemical vapor deposition (MOCVD), 54–58 mist-chemical vapor deposition (mist-CVD), 59 halide vapor phase epitaxy (HVPE), 60–62 laser molecular beam epitaxy (LMBE), 63,64 pulsed laser deposition (PLD) 65–69 and magnetron sputtering. 70–73 Compared with the expensive costs of crystal growth of other wide bandgap semiconductors ( e.g. , GaN and SiC) and irrealizable wafer of other phases, β-Ga 2 O 3 has advantages in crystal growth and large-scale applications.…”

“…53 Meanwhile, the b-Ga 2 O 3 film can also be realized by epitaxial methods, e.g., metal-organic chemical vapor deposition (MOCVD), [54][55][56][57][58] mistchemical vapor deposition (mist-CVD), 59 halide vapor phase epitaxy (HVPE), [60][61][62] laser molecular beam epitaxy (LMBE), 63,64 pulsed laser deposition (PLD) [65][66][67][68][69] and magnetron sputtering. [70][71][72][73] Since the metastable phase a-Ga 2 O 3 possesses a similar structure and little lattice mismatches to sapphire, the high-quality metastable phase a-Ga 2 O 3 can be deposited on sapphire substrates by heteroepitaxial methods, e.g., pulsed laser deposition (PLD), 74 halide vapor phase epitaxy (HVPE), 75 metal-organic chemical vapor deposition (MOCVD), 76 low-temperature atomic layer deposition (ALD), 77 and mist-CVD. 78,79 a-Ga 2 O 3 is a typical hexagonal crystal with the space group R% 3c, whose lattice constants are a = b = 4.98 Å, c = 13.43 Å, a = g = 901, b = 1201.…”

Synthesis and Characterization of a Porous Ga2O3 Material with a Low Dielectric Constant

“…Considering all the requirements and combining the necessary factors, synthesis of the new candidate porous Ga etc. 14,15 The monoclinic β phase of gallium oxide (β-Ga 2 O 3 ) with lattice parameters: a = 12.2 Å, b = 3.0 Å, c = 5.8 Å, 16 stands out as the most thermally stable crystal structure when compared to other gallium oxide phases, namely, α-Ga 2 O 3 , γ-…”

“…Gallium oxide (Ga 2 O 3 ) is a wide-band-gap (4.8–4.9 eV) ceramic material with potential applications in power electronics, optoelectronics, electroluminescence devices, etc. , The monoclinic β phase of gallium oxide (β-Ga 2 O 3 ) with lattice parameters: a = 12.2 Å, b = 3.0 Å, c = 5.8 Å, stands out as the most thermally stable crystal structure when compared to other gallium oxide phases, namely, α-Ga 2 O 3 , γ-Ga 2 O 3 , δ-Ga 2 O 3 , and ε-Ga 2 O 3 . Remarkably, all these various gallium oxide phases can be converted to the final β phase under certain conditions .…”