2014
DOI: 10.1021/am506024s
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Optimized Grafting Density of End-Functionalized Polymers to Polar Dielectric Surfaces for Solution-Processed Organic Field-Effect Transistors

Abstract: Polystyrene (PS) grafted to silicon oxide (SiO2, referred to as gPS-SiO2) bilayers generated via a polymer grafting method were used as organic-oxide hybrid gate dielectrics to fabricate solution-processed triethylsilylethynyl anthradithiophene (TES-ADT) organic field-effect transistors (OFETs). The dielectric surface properties were significantly altered by the areal grafting densities of different molecular weight (Mw) PS chains with end-functionalized dimethylchlorosilane attached to the SiO2 surfaces. Less… Show more

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Cited by 28 publications
(49 citation statements)
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“…The surface roughness of the dielectric layer played a significant role in the formation of a crystalline semiconducting layer structure. A rough dielectric surface can prevent the surface diffusion of deposited semiconductor molecules, thereby resulting in smaller grains and less crystalline structures in the semiconductor layer . As shown in the AFM images of the pentacene and DNTT films grown on the parylene‐C dielectric, in Figure d,e, the grains were 100–200 nm in size, much smaller than the grain sizes (higher than 1 µm) in pentacene and DNTT grown on a smooth dielectric surface, such as a spin‐coated polymer or silane‐treated SiO x dielectrics.…”
Section: Resultsmentioning
confidence: 94%
“…The surface roughness of the dielectric layer played a significant role in the formation of a crystalline semiconducting layer structure. A rough dielectric surface can prevent the surface diffusion of deposited semiconductor molecules, thereby resulting in smaller grains and less crystalline structures in the semiconductor layer . As shown in the AFM images of the pentacene and DNTT films grown on the parylene‐C dielectric, in Figure d,e, the grains were 100–200 nm in size, much smaller than the grain sizes (higher than 1 µm) in pentacene and DNTT grown on a smooth dielectric surface, such as a spin‐coated polymer or silane‐treated SiO x dielectrics.…”
Section: Resultsmentioning
confidence: 94%
“…The lower molecular weight PS- g -SiO 2 surface exhibited smoother brush like structure while higher molecular weight PS- g -SiO 2 surface exhibited pancake like structure. The smoother surface of 8 kDa PS- g -SiO 2 surface showed the highest mobility (2.12 cm 2 ·V −1 ·s −1 ) whereas the pancake surface of 135 kDa PS- g -SiO 2 showed the lowest mobility (0.85 cm 2 ·V −1 ·s −1 ) [ 219 ].…”
Section: Grafting To Methods To Prepare Polymer Grafted Nanoparticlesmentioning
confidence: 99%
“…They studied grafting densities of different molecular weight (M w ) PS, finding that high-M w polymers lead to lower grafting densities. 10 In their work, the SiO 2 surface was modified by different molecular weight (M w ) PS chains with end-functionalized dimethylchlorosilane chemically attached to the surfaces. The density of the PS chains grafted onto the surface significantly influenced the assembly of triethylsilylethynyl anthradithiophene (TES-ADT) molecules on the substrate.…”
Section: Dielectrics Of Ofetsmentioning
confidence: 99%
“…[5][6][7][8][9] The characteristics of the grafting polymer film can be accurately modulated at the micro/ nano-scale by facile physical or chemical methods. [10][11][12] Thus, surface-grafting technology, a simple and efficient method to fine-tune physical/chemical properties or functionality for material interface science, has been rapidly developed in various fields relating to surface/interface science, such as optoelectronics, 13,14 energy, 15,16 biomedical science 17,18 and so on.…”
Section: Introductionmentioning
confidence: 99%
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