Optimized Dynamic $\text{R}_{ \mathrm{\scriptscriptstyle ON}}$ With p-Type Buried Layer Bridge in 700-V Triple RESURF nLDMOS

Mao, Kun; Nie, Hai; Zhu, Chunxiang; Yao, Yao; Du, Jiang

doi:10.1109/ted.2017.2714703

Cited by 6 publications

(1 citation statement)

References 14 publications

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“…16,[18][19][20][21] The most distinctive feature of a T-RESURF device is the P-buried layer among the drift region. 22,23) Although the P-buried layer enables the drift region to achieve a higher doping concentration than that in S-RESURF devices, the complicated geometric shape of the drift region results in vast modeling and analysis difficulties using conventional 2D methods. 16,[24][25][26] Missing in simple analytical models and clear theoretical analysis, unfortunately, results in difficulties in providing physical insights and device optimization.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study on optimization criterion of the triple RESURF lateral power devices via virtual junction concept

Wang¹,

Guo²,

Zhang³

et al. 2021

Jpn. J. Appl. Phys.

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The triple reduced surface field (T-RESURF) technique allows the drift region to achieve a much higher doping concentration while maintaining its breakdown voltage unaffected. Yet, as a result of the missing design guidance, the optimization of the T-RESURF effect is difficult to be realized in practice. In light of that, in this paper, the Virtual Junction Concept is proposed to provide the optimization criterion and explore physical insight of the T-RESURF effect. The proposed method bypasses the complicated 2D analysis by equivalenting the 2D drift region to a 1D virtual junction. The effectiveness and correctness of such a method are validated by the good agreement between modeled and simulated results. Benefit from its simplicity and veracity, the proposed method can not only conduct qualitative and quantitative analysis on the T-RESURF effect but also capable of providing design guidance and optimization criterion.

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