Optimizations of Negative Capacitance Independent Dual-Gate FinFETs

Bai, Wei; Hu, Jianping; Yang, Tingfeng

doi:10.1109/nano.2018.8626333

Cited by 2 publications

(1 citation statement)

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“…Also, the improved frequency performance is obtained in NC‐FinFET processor. The optimization of independent dual gate FinFET (IDG‐FinFET) with embedded ferroelectric layer in gate stacks is reported by Bai et al 25 A high ON current, low leakage current, and a reasonable switching ratio is achieved by adjusting the thickness of ferroelectric layer. The electrical properties of negative capacitance (NC) Ge‐FinFET is highlighted in presence of fixed trap charge 26 .…”

Section: Introductionmentioning

confidence: 99%

Study on impact of ferroelectric layer thickness on RF /analog and linearity parameters in ferroelectric‐FinFET

Saha

Bhowmick

Baishya

2021

Int J RF Mic Comp-Aid Eng

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In this paper, we systematically investigated the effect of ferroelectric (FE) layer thickness (t FE ) on transfer and RF/analog characteristics such as transconductance (g m ), total gate capacitance (C gg ), cut off frequency (f t ), transconductance frequency product, and unilateral power gain in Ferroelectric-FinFET (Fe-FinFET) through 3D TCAD simulator. Further, we highlighted the influence of t FE on linearity figure of merits (FoMs), higher order harmonics (g m2 and g m3 ), voltage intercept points (VIP 2 and VIP 3 ), third order power intercept point (IIP 3 ), third order intermodulation distortion (IMD 3 ), and 1-dB compression point (1-dB comp. Pnt.) for Fe-FinFET. Moreover, the harmonic distortion (HD) parameters like second and third order harmonic distortion (HD2 and HD3) and total harmonic distortion (THD) are reported taking t FE as a parameter. The noise spectral densities of Fe-FinFET taking t FE as parameter is also highlighted. The scaling of t FE has a significant impact on RF/analog parameters and these RF/analog FoMs are a function of t FE . It is also perceived that linearity and HD parameters are dependent on scaling of t FE . Results reveal that with increase in t FE , RF/analog characteristics degrades, whereas, superior linearity FoMs is achieved. It is also seen that HD parameters are improved with increased in t FE value. The increased in t FE leads to increase in noise spectral densities. Finally, the comparative study of electrical parameters of this work with the existing literature is investigated.

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Section: Introductionmentioning

confidence: 99%