Optimization of trench manufacturing for a new high-voltage semiconductor technology

The optimization of deep trench isolation structure for high voltage devices on SOI substrate

“…It can be concluded from Eqs. (7) and (8) that the breakdown voltage of double trench is less twice than that of single deep trench. In the investigated double trench isolation structure, the relative error of voltage drop between trench A and trench B is 11%.…”

“…Refs. [7,8] demonstrated the influence of technological methods of growing or depositing the oxide on the breakdown voltage of trench. However, all results from these references show that the breakdown voltage of the trench is much lower than the ideal value.…”

Single trench isolation for a 650 V SOI technology with low mechanical stress

“…In these cases the designer must cope with non-optimum area consumptions and the side effect of unbalanced voltage drops caused by unequal trench lengths and trench capacitances. Therefore, the current research work of the authors has the goal of developing a reliable single trench isolation for operating voltages of up to 650 V [4].…”

“…We refer to this effect as electric formation of the trench. For the purpose of comparison it is therefore essential to keep the measuring conditions constant [4,5,6]. In Fig.…”