Optimization of thermoelectric properties of n-type Ti, Pb co-doped SnSe

Li, Fu; Wang, Wenting; Qiu, Xincheng; Zheng, Zhaoke; Fan, Ping; Luo, Jingting; Li, Bo

doi:10.1039/c7qi00436b

Cited by 35 publications

(29 citation statements)

References 31 publications

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“…As shown in Figure 3 a, the electrical conductivities of all the samples increase with increasing temperature in the whole measured temperature, indicating a typical semiconducting behavior with nondegenerate characteristics. It is also found that the electrical conductivity for the undoped sample is lower than the doped ones, which shows about 8.53 × 10 −4 Scm −1 at room temperature which then increases nearly four orders of magnitude at 750 K, reaching 6.38 Scm −1 , which is similar to the previous report [ 18 ]. After LaCl 3 doping, the value has improved to about 0.02 Scm −1 at room temperature, and then sharply increased in range of 650 to 750 K. An electrical conductivity of 15.55 Scm −1 at 750 K is finally obtained, which is two times higher than that of the undoped samples at the same temperature.…”

Section: Resultssupporting

confidence: 90%

“…Polycrystalline SnSe- x wt % LaCl 3 ( x = 0.0, 0.5 and 1.0) samples were synthesized by combing mechanical alloying (MA) and spark plasma sintering (SPS), which is similar to our previous report [ 18 , 25 ]. High-purity starting raw materials Sn (99.999%) and Se (99.999%) with stoichiometric ratio were subjected to MA in argon (>99.5%) atmosphere.…”

Section: Methodsmentioning

confidence: 88%

“…Thus, the carrier concentration can be optimized while the lattice thermal conductivity can be reduced, resulting in a great enhancement of the ZT value. In fact, the doping effect on SnSe has been extensively investigated in the past work and enhanced TE properties have been achieved by doping with various elements, such as Ag, Na, K, Ag, Pb, Ca, Cu, Br, I, and Ti [ 12 , 13 , 15 , 16 , 17 , 18 , 19 , 20 ]. For instance, a maximum ZT value of 1.2 was realized for the K and Na codoped SnSe at 773 K. Nevertheless, systematic studies on polycrystalline SnSe doped with rare earth elements with insight into their transport mechanisms are rather scarce so far [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

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Enhanced Thermoelectric Properties of Polycrystalline SnSe via LaCl3 Doping

Wang

et al. 2018

Materials

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LaCl3 doped polycrystalline SnSe was synthesized by combining mechanical alloying (MA) process with spark plasma sintering (SPS). It is found that the electrical conductivity is enhanced after doping due to the increased carrier concentration and carrier mobility, resulting in optimization of the power factor at 750 K combing with a large Seebeck coefficient over 300 Μvk−1. Meanwhile, all the samples exhibit lower thermal conductivity below 1.0 W/mK in the whole measured temperature. The lattice thermal conductivity for the doped samples was reduced, which effectively suppressed the increscent of the total thermal conductivity because of the improved electrical conductivity. As a result, a ZT value of 0.55 has been achieved for the composition of SnSe-1.0 wt % LaCl3 at 750 K, which is nearly four times higher than the undoped one and reveals that rare earth element is an effective dopant for optimization of the thermoelectric properties of SnSe.

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Section: Resultssupporting

confidence: 90%

Section: Methodsmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

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Enhanced Thermoelectric Properties of Polycrystalline SnSe via LaCl3 Doping

Wang

et al. 2018

Materials

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“…As can been seen, the ultralow κ plays the dominant role in achieving a competitive high ZT of ≈1.1 at 773 K in our Sb‐doped SnSe. Figure S8 (Supporting Information) also presents the calculated average and peak ZT s of SnSb 0.02 Se 0.96 compared with other reported n‐type polycrystalline SnSe (SnSe 0.95 + 4% BiCl 3 , SnSe 0.87 I 0.03 S 0.1 , SnSe 0.95 + 3% PbBr 2 , and Sn 0.74 Pb 0.20 Ti 0.06 Se, respectively).…”

Section: Resultsmentioning

confidence: 99%

Realizing High Thermoelectric Performance in n‐Type Highly Distorted Sb‐Doped SnSe Microplates via Tuning High Electron Concentration and Inducing Intensive Crystal Defects

Shi

Zheng

Liu

et al. 2018

Advanced Energy Materials

128

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figure of merit (ZT) is defined as ZT = S 2 σT/κ = S 2 σT/(κ e +κ l ), where S, σ, κ, κ e , κ l , and T are the Seebeck coefficient, the electrical conductivity, the total thermal conductivity, the electrical thermal conductivity, the lattice thermal conductivity, and the absolute temperature, respectively. [3,5] A high powder factor (S 2 σ) and a low κ are required to achieve a high ZT value. [6][7][8] So far, significant efforts have been devoted to enhancing S 2 σ and/or reduce κ. [9] For the strategies of achieving high S 2 σ, resonant state doping, [10][11][12] band converging, [13][14][15][16] minority carrier blocking, [17,18] and quantum confinement [19][20][21] were designed and developed. For reducing κ, the strategies of nanostructuring, [22][23][24][25] hierarchical architecturing, [26][27][28] and nanoprecipitate inducing [29][30][31] were successfully adopted.Tin selenide (SnSe) is a typical semiconductor with a narrow bandgap of ≈0.9 eV, [32][33][34] making it a good candidate with great potentials for applications in low-cost thermoelectrics. [35][36][37] A remarkable high peak ZT of ≈2.6 at 923 K was reported in the p-type SnSe single crystals, [38] and a relative high ZT of ≈2.2 at 773 K was also achieved from the n-type Bi-doped SnSe single crystals, [39] both along their b-axes. Such high ZT values come from their ultralow κ (both <0.3 W m −1 K −1 at 773 K). [38,39] However, suffered from their poor mechanical properties, rigid crystal growth conditions, and high production cost, SnSe single crystals are difficult to be employed in practical thermoelectric devices, and the techniques used for growing single crystals are limited for repeatable and industrial scale-up. [40] To overcome these challenges, polycrystalline SnSe has become a research topic. To synthesize polycrystalline SnSe, various methods have been explored, such as melting, [40][41][42] arc-melting, [43,44] mechanical alloying, [45][46][47] solid state reaction, [48][49][50] and hydrothermal, [51][52][53] or solvothermal methods. [54,55] To achieve a high ZT, texturing and doping have been two key approaches to enhance S 2 σ and/or reduce κ, from which the ZT values have been improved from 0.1 to ≈1.7 (p-type), although such ZT values are still much lower than their single crystal counterparts due to their relatively high κ and low S 2 σ. [52,[56][57][58][59][60] Considering the requirement of both p-type and n-type thermoelectric materials for composing the thermoelectric In this study, a record high figure of merit (ZT) of ≈1.1 at 773 K is reported in n-type highly distorted Sb-doped SnSe microplates via a facile solvothermal method. The pellets sintered from the Sb-doped SnSe microplates show a high power factor of ≈2.4 µW cm −1 K −2 and an ultralow thermal conductivity of ≈0.17 W m −1 K −1 at 773 K, leading a record high ZT. Such a high power factor is attributed to a high electron concentration of 3.94 × 10 19 cm −3 via Sb-enabled electron doping, and the ultralow thermal conductivity derives from the enhanced phonon scatter...

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“…For example, the thermoelectric properties of both single and polycrystalline SnSe have been investigated widely and extremely high ZT values were reported. [4,[19][20][21][22][23][24] The extraordinarily low lattice thermal conductivity about 0.2 -0.3 Wm -1 K -1 was found in both p-and n-type SnSe crystals to realize the extremely high ZT values larger than 2.5. [4,[20][21] Besides, α-In 2 Se 3 is another typical chalcogenide with low lattice thermal conductivity κ L ~ 0.8 Wm -1 K -1 at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Optimization of thermoelectric properties achieved in Cu doped β-In2S3 bulks

Chen

Wang

et al. 2019

Journal of Alloys and Compounds

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β-In 2-x Cu x S 3 (0 ≤ x ≤ 0.40) bulks were prepared by solid-state reaction followed by pulsed current sintering. For x ≤ 0.20, X-ray diffraction indicated the formation of single phase, while the secondary phase, Cu 2 S, was observed for the samples prepared at x = 0.30 and x = 0.40. The Cu-doping allowed us to optimize the power factor in range of whole measured temperature by reducing the low temperature electrical resistivity. With the significant reduction in lattice thermal conductivity, a maximum ZT of 0.51 at 700 K and an average ZT of 0.31 from 300 to 700 K were obtained for the sample with x= 0.05, which values are 0.3 and 1.2 times higher than that of pristine sample.

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Optimization of thermoelectric properties of n-type Ti, Pb co-doped SnSe

Cited by 35 publications

References 31 publications

Enhanced Thermoelectric Properties of Polycrystalline SnSe via LaCl3 Doping

Enhanced Thermoelectric Properties of Polycrystalline SnSe via LaCl3 Doping

Realizing High Thermoelectric Performance in n‐Type Highly Distorted Sb‐Doped SnSe Microplates via Tuning High Electron Concentration and Inducing Intensive Crystal Defects

Optimization of thermoelectric properties achieved in Cu doped β-In2S3 bulks

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