Optimization of the germanium preamorphization conditions for shallow-junction formation

Öztürk, Mehmet C.; Wortman, J. J.; Osburn, C. M.; Ajmera, A.; Rozgonyi, G. A.; Frey, Eric; Chu, W. K.; Lee, C.

doi:10.1109/16.2510

Cited by 116 publications

(18 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As the growth interface reaches the implanted dopant atoms, the dopants incorporate substitutionally due to the epitaxial nature of the process, and become electrically active. In fact, active dopant concentrations in excess of equilibrium solubility can be achieved via SPEG (Bousetta et al, 1991;Ozturk et al, 1988;Tsaur and Anderson, 1983;Vonborany and Kogler, 1993). In contrast, if activation of implanted dopant atoms is attempted in crystalline material, substitutional incorporation of the dopant can only occur if vacancies are present, and the dopants and vacancies have enough mobility to combine during annealing.…”

Section: Introductionmentioning

confidence: 97%

Defective Solid-Phase Epitaxial Growth of Si

Rudawski¹,

Lind²,

Martin³

2015

Semiconductors and Semimetals

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 97%

Defective Solid-Phase Epitaxial Growth of Si

Rudawski¹,

Lind²,

Martin³

2015

Semiconductors and Semimetals

View full text Add to dashboard Cite

“…Ge has gained much acceptance as an amorphization species because it has the advantage of inducing greater disorder in the crystal structure at lower doses than Si, owing largely to its bigger atomic structure. Complete removal of damage induced by Ge amorphization is possible and has been achieved upon annealing 3,4 . However, low energy Ge preamorphization alone has not been very effective in preventing the diffusion of excess Si interstitials under certain conditions, thereby inducing TED upon dopant activation 5 .…”

Section: Introductionmentioning

confidence: 99%

Study of the Effects of a Two-Step Anneal on the End of Range Defects in Silicon

et al. 2002

View full text Add to dashboard Cite

Transient enhanced diffusion (TED) is a challenge that the semi-conductor industry has been faced with for more than two decades. Numerous investigations have been conducted to better understand the mechanisms that govern this phenomenon, so that scale down can be acheived. {311} type defects and dislocation loops are known interstitial sources that drive TED and dopants such as B utilize these interstitials to diffuse throughout the Si lattice. It has been reported that a two-step anneal on Ge preamorphized Si with ultra-low energy B implants has resulted in shallower junction depths. This study examines whether the pre-anneal step has a measurable effect on the end of range defects. Si wafers were preamorphized with Ge at 10, 12, 15, 20 and 30keV at a dose of 1x10 15 cm -2 and subsequently implanted with 1x10 15 cm -2 1keV B. Furnace anneals were performed at 450, 550, 650 and 750 o C; the samples were then subjected to a spike RTA at 950 o C. The implant damage was analyzed using Quantitative Transmission Electron Microscopy (QTEM). At the low energy Ge preamorphization, little damage is observed. However at the higher energies the microstructure is populated with extended defects. The defects evolve into elongated loops as the preanneal temperature increases. Both the extended defect density and the trapped interstitial concentration peak at a preanneal temperature of 550 o C, suggesting that this may be an optimal condition for trapping interstitials.

show abstract

“…The defect region is produced by placing the PAI implant profile somewhat deeper than the boron profile. [3][4][5] Therefore, PAI energy was chosen to be at 40 and 50 keV and boron energy varied between 3 and 5 keV.…”

Section: Introductionmentioning

confidence: 99%

X-ray and secondary ion mass spectrometry investigation of activation behavior of self-preamorphized silicon substrate

Suvkhanov¹,

Mirabedini²,

Hornback³

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques Room temperature migration of boron in crystalline silicon during secondary ion mass spectrometry profiling Techniques and applications of secondary ion mass spectrometry and spreading resistance profiling to measure ultrashallow junction implants down to 0.5 keV B and BF 2

show abstract

Optimization of the germanium preamorphization conditions for shallow-junction formation

Cited by 116 publications

References 33 publications

Defective Solid-Phase Epitaxial Growth of Si

Defective Solid-Phase Epitaxial Growth of Si

Study of the Effects of a Two-Step Anneal on the End of Range Defects in Silicon

X-ray and secondary ion mass spectrometry investigation of activation behavior of self-preamorphized silicon substrate

Contact Info

Product

Resources

About