Defective Solid-Phase Epitaxial Growth of Si

Direct-Write Lithiation of Silicon Using a Focused Ion Beam of Li+

“…22 Traditional application of ion beams to electrochemical systems center on the use of Ga + FIBs for nanoscale milling or as part of transmission electron microscopy (TEM) sample preparation. Other battery-relevant work has used broad area implantation to increase adhesion between two dissimilar electrode layers 23 and to nanostructure the morphology of Ge electrodes in order to increase electrode capacity. 24 Broad area implantation using Li ions has been used to modify the electronic properties of Se nanowires 25 as well as to study amorphization and defects in Si.…”

“…Other battery-relevant work has used broad area implantation to increase adhesion between two dissimilar electrode layers 23 and to nanostructure the morphology of Ge electrodes in order to increase electrode capacity. 24 Broad area implantation using Li ions has been used to modify the electronic properties of Se nanowires 25 as well as to study amorphization and defects in Si. 26 Initial tests using LiFIB implantation of Sn micro-spheres demonstrated the qualitative utility of the technique for lithiating battery-relevant materials and compared ion implantation directly to electrochemical lithiation of similar structures.…”