Optimization of the GaN-buffer growth on 6HSiC (0001)

Byun, Dongjin; Kim, Gyeungho; Lim, Dongsup; Lee, Dokyol; Choi, In–Hoon; Park, Dalkeun; Kum, Dong Wha

doi:10.1016/s0040-6090(96)08999-7

Cited by 15 publications

(11 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is expected that the roughness will increase again after 7 min of buffer growth time even though no experiment was performed, because a similar type of roughness fluctuation with buffer growth time was also observed from a SiC substrate. 4 Roughness variation during buffer growth or nitridation appears to be a common behavior, however, a proper explanation for this behavior does not exist at present. Low temperature (10K) PL spectra are presented in Fig.…”

Section: Resultsmentioning

confidence: 97%

“…All samples show the donor bound exciton peak around 3.47 eV as reported previously. 1,4,[11][12][13] The PL intensity in the yellow emission region is low. It should be noted that the minimum full width at half maximum (FWHM) of PL spectra is observed in the sample whose nitridation time was 5 min and where the AFM roughness was at the second minimum.…”

Section: Resultsmentioning

confidence: 99%

“…The buffer growth temperature was chosen using results from the previous study and to ensure 2-D nucleation and the growth of a GaN film. 4 Surface morphology after nitridation or buffer growth was observed by AFM (Park Scientific Instrument STM-SU2-210) with a scanning frequency of 4 Hz. Five different measurements were obtained on a scanning area of 0.5 µm × 0.5 µm, and one measurement on 10 µm × 10 µm area to confirm the suitability of the small area measurement.…”

Section: Methodsmentioning

confidence: 99%

“…[4][5][6] High quality GaN can also be obtained by nitridation of a substrate with ammonia before the film growth. [7][8][9][10] In both cases, there seems to be optimum growing conditions where two-dimensional (2-D) nucleation and lateral growth is enhanced for the best crystal quality.…”

Section: Introductionmentioning

confidence: 99%

“…AFM analysis has been used to observe the nucleation layer and to optimize process variables for GaN-buffer growth on SiC (0001). 4 In this study, the authors studied the change of surface roughness during nitridation or/ and GaN-buffer growth, their effects on the optical property of GaN films, and the use of AFM roughness is suggested as an indicator for materials quality in the MOCVD growth of GaN.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

The effect of substrate surface roughness on GaN growth using MOCVD process

Kum

Byun

1997

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

Efficiency and lifetime of light emitting diodes and laser diodes inversely depend on defect density of the crystal, and reduction of defect density is accomplished by a proper choice of substrate or a deliberate modification of the substrate surface. Buffer growth or nitridation can yield an atomically flat surface and the roughness of a substrate surface for GaN deposition can be controlled by either method such that lateral film growth can be promoted. The effect of nanoscale surface roughness on photoluminescence and crystal quality of GaN/Al 2 O 3 (0001) has been studied. The optimal conditions for N 2 -nitridation or/and GaN-buffer growth correlate well with the minimum surface roughness and surface morphology as determined by atomic force microscopy and it is suggested that this can be used for process optimization of GaN film growth.

show abstract

Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

The effect of substrate surface roughness on GaN growth using MOCVD process

Kum

Byun

1997

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

show abstract

New Pretreatment Method of Sapphire for GaN Deposition

Byun¹,

Kim

Hong

et al. 1999

phys. stat. sol. (a)

View full text Add to dashboard Cite

Reduction of Defects in GaN on Reactive Ion Beam Treated Sapphire by Annealing

Byun

Jhin

Cho

et al. 2001

phys. stat. sol. (b)

View full text Add to dashboard Cite

Previous studies showed that reactive ion beam (RIB) pretreatment of sapphire prior to GaN deposition results in the reduction of dislocation density in the GaN film. It was also found that an amorphous phase remained at the interface region after the GaN deposition at high temperature. Annealing was performed to obtain the structural change due to the recrystallization of the remaining amorphous phase, and the effect on the electrical properties of the GaN thin film on RIB treated sapphire (0001) substrate. DCXRD spectra and Hall mobility of the specimen were studied as a function of the annealing time at 1000 C in N 2 atmosphere. For the annealed specimen, FWHM of DCXRD decreased and the mobility increased. The annealed specimen was compared with a not annealed sample by TEM. A decrease of lattice strain and a reduction of the dislocation density about 56-59% was observed. The present results clearly show that the combination of RIB pretreatment and proper post annealing conditions improve the properties of GaN films grown by MOCVD.

show abstract

Optimization of the GaN-buffer growth on 6HSiC (0001)

Cited by 15 publications

References 14 publications

The effect of substrate surface roughness on GaN growth using MOCVD process

The effect of substrate surface roughness on GaN growth using MOCVD process

New Pretreatment Method of Sapphire for GaN Deposition

Reduction of Defects in GaN on Reactive Ion Beam Treated Sapphire by Annealing

Contact Info

Product

Resources

About