Optimization of the CdS Buffer Layer in Effective Solar Cells Based on Cu(In,Ga)Se<sub>2</sub>

Polikanin, A. M.; Гончарова, О. В.; Sergienya, S. A.; Gremenok, V. F.; Залесский, В. Б.

doi:10.1023/b:japs.0000049639.56456.b6

Cited by 7 publications

(6 citation statements)

References 11 publications

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“…It can be seen that the coefficient of induced photopleochroism depends only slightly on the photon energy and is extremely small in the entire range of photosensitivity. The value of this coefficient is about two times smaller than what is expected from the theory [19], We can state that the established trends of induced photopleochroism in the obtained TFHPs are indicative of the effect of interference-related bleaching of these photoelements in the entire spectral range of photoconversion as a result of deposition of thin ZnO films onto the outer plane of the CdS and ln 2 S 3 barrier layers [14,15), Evidently, the optimization of magnetron-assisted deposition of ZnO films would make it possible to increase the quantum efficiency of photoconversion in a TFHP, while the use of polarization photoelectric spectroscopy ensures the rapid monitoring of the processes of fonnation of antiretlection single-layer coatings from thin ZnO films,…”

Section: 3mentioning

confidence: 58%

“…The Cu-In-Ga films were deposited using ion-plasma evaporation of the target of these metals in vacuum ( -6x I 0 --4 Pa) onto glass substrates ( either with a specially prepared surface or with a molybdenum sublayer) heated to I 00e° C. Heat treatment of the initial Cu-In-Ga films was carried out in the nitrogen inert atmosphere in the presence of selenium vapors in the temperature range of 250-520°C. Physicochemical studies showed that these conditions of heat treatment ensured the synthesis of a quaternary solid solution with chalcopyrite structure [12,13,14]. The duration of the process was chosen so as to satisfy the conditions for completion of the reaction of formation of homogeneous films of quaternary solid solution with the required composition.…”

Section: Resultsmentioning

confidence: 99%

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New technologies for new environmentally oriented european economics: cadmium-free thin film Cu(In,Ga)Se2/(In2S3) heterophotoelements

2007

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At present, the time has come to start the active search for commercial ecologically safetechnologies for growing large-area CulnGaSe films and obtaining the thin filmheterophotoelements on the basis of these films [1-4], It is very benefitial task for newenvironmentally oriented European economics, We have long tenn experience with problemhow to develop ecology safe heterophotoelements as high-efficiency photoconverters of solarradiation, First of all we have experiment with CulnSe2/green leafs heterojunctions [5-1 OJ,then we studied thin-film n-ZnO:Al/p-Cu(ln,Ga)Se2 heterojunctions which was fabricated bymagnetron sputtering of an ZnO target, leading to a deposition of Cu(ln,Ga)Se2 films on thesurface [ 11 ], This study is a continuation of the important line of research in modernphotoenergy engineering and is concerned with development of the technology of cadmiumfree Cu(ln, Ga)Sei/ln2S3 thin film heterophotoelements,The method of heat treatment of metallic Cu-In-Ga layers in the N2 inert atmosphere in thepresence of selenium and sulfur vapors was used to grow homogeneous films of Cu(ln,Ga)(S,Se)2 alloys onto which the CdS or ln2S3 films were deposited and, on the basis of thesestructures, the thin-film glass/Mo/p-Cu(ln, Ga) (S, Se)i/n-(ln2S3,CdS)/n-ZnO/Ni-AIphotoelements were fabricated, The mechanisms of charge transport and the processes ofphotosensitivity in the obtained structures subjected to irradiation with natural and linearlypolarized light are discussed, The broadband photosensitivity of thin-filmheterophotoelements and the induced photopleochroism were detected; these findings indicatethat there is an interference-related blooming of the structures obtained,It is concluded that it is possible to use ecologically safe cadmium-free thin-filmheterostructures as high-efficiency photoconverters of solar radiation,

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Section: 3mentioning

confidence: 58%

Section: Resultsmentioning

confidence: 99%

New technologies for new environmentally oriented european economics: cadmium-free thin film Cu(In,Ga)Se2/(In2S3) heterophotoelements

2007

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“…In order to demonstrate more the correlations of the electrical and optical properties of the nanocrystals, we compare optical spectra of chemical bath deposited layers [11] and film multilayer structures with cubic CdS nanocrystals of the same size (100 nm), but with different ρ (Fig. 2).…”

Section: Films Structures With Cds Nanocrystalsmentioning

confidence: 99%

“…The substrates were kept at room temperature (RT) on a copper holder, and the vacuum pressure in the evaporation chamber was about 10 -6 Torr. Crystals and films produced in standard ways were used as reference samples [10][11][12][13]. After the growth some samples were γ-irradiated at RT [14].…”

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confidence: 99%

Thin‐film layers and multilayer nano‐structures with controllable properties

Гончарова

Gremenok

Kravchenko

et al. 2009

Phys. Status Solidi (c)

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Correlations between the electrical and optical properties of the experimental periodical multilayers and reference thin film layers with defined microstructure have been investigated. The results indicate that thin film multilayers composed of nanolayers with thicknesses 150–10 nm might be suggested as low‐cost materials with controllable microstructure and properties. High‐quality multilayer structures with dielectric and semiconductor nanocrystals prepared by thermal evaporation show properties, which is related to high‐quality nanocrystals, but at the same time depends strongly on the defect content, especially as far as their 1–2 ps nonlinearities are concerned. Critical factors are nanocrystal purity and metal excess collection in their boundaries regions. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The sulfur concentration in the p-Cu(In,Ga)(S,Se) 2 films was control by the parameters of the sulfurization process. The barrier n-CdS films with a thickness of 40-50 nm were deposited onto the external surface of pCu(In,Ga)(S,Se) 2 films using the chemical bath deposition method [12].…”

mentioning

confidence: 99%

Cd‐free Cu(In,Ga)Se₂/In₂S₃thin‐film heterostructures

Rud

Gremenok

et al. 2009

Phys. Status Solidi (c)

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The technology of heat treatment of initial Cu‐In‐Ga layers in an inert N2 atmosphere in the presence of Se and S vapors was used in self‐organized growth of homogeneous films of Cu(In,Ga)(S,Se)2 alloys onto which the CdS or In2S3 films were deposited and, on the basis of these structures, thin‐film glass/Mo/p‐Cu(In,Ga)(S,Se)2/(In2S3, CdS)/n‐ZnO/Ni‐Al heterostructures were created. The mechanism of charge transport and the processes of photosensitivity in the obtained structures subjected to irradiation with natural and linearly polarized light are discussed. The broadband photosensitivity of thin‐film heterostructures and induced photopleochroism were detected. These findings indicate that there is an interference antireflection of the structures obtained. It is established that higher solar‐cell efficiency in these heterostructures occurs if In2S3 thin films are used as heterobarriers. This technology can be used in the creation ecologically safe Cd‐free next generation thin‐film solar cells. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Optimization of the CdS Buffer Layer in Effective Solar Cells Based on Cu(In,Ga)Se₂

Cited by 7 publications

References 11 publications

New technologies for new environmentally oriented european economics: cadmium-free thin film Cu(In,Ga)Se2/(In2S3) heterophotoelements

New technologies for new environmentally oriented european economics: cadmium-free thin film Cu(In,Ga)Se2/(In2S3) heterophotoelements

Thin‐film layers and multilayer nano‐structures with controllable properties

Cd‐free Cu(In,Ga)Se₂/In₂S₃thin‐film heterostructures

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Optimization of the CdS Buffer Layer in Effective Solar Cells Based on Cu(In,Ga)Se2

Cited by 7 publications

References 11 publications

New technologies for new environmentally oriented european economics: cadmium-free thin film Cu(In,Ga)Se2/(In2S3) heterophotoelements

New technologies for new environmentally oriented european economics: cadmium-free thin film Cu(In,Ga)Se2/(In2S3) heterophotoelements

Thin‐film layers and multilayer nano‐structures with controllable properties

Cd‐free Cu(In,Ga)Se2/In2S3 thin‐film heterostructures

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Resources

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Optimization of the CdS Buffer Layer in Effective Solar Cells Based on Cu(In,Ga)Se₂

Cd‐free Cu(In,Ga)Se₂/In₂S₃thin‐film heterostructures