This work concentrates on the rewiew of the study of the photoelectrical phenomena of thin films for solar cells and also show the search of a new physical effects, which may be the basis for the development of new technologies, diagnostic methods, new types of photoconverters, and devices on these multinary semiconductors.Solar cells which based on silicon or binary III-V semiconductor compounds and their solid solutions successfully fulfilled their role as the first energy sources in outer space in the 1950s-1990s. Since 1997, technological development has been carried out for amorphous Si, CdTe thin film polycristal and CuInSe 2 (CIS) solar cells in the thin film solar cell family. Thin film solar cells based on CuInSe 2 and the related materials heretofore have been studied only for the aims of creating efficiencies. Complex physical and technological studies of the thin film solar cells on the basis chalcogenide chalcopyrite materials have made it possible to create devices with high radiation hardness and efficiencies as high as 18% [1][2][3][4]. At the same time, basic studies aimed to speed up film deposition is conducted from the aspect of material and substrate technologies for further cost reductions. For CIS solar cells research and development efforts continue to establish both element technologies necessary for the improvement in product quality and efficiency and large-area film fabrication technologies as essential part of the solar cell production process.
At present, the time has come to start the active search for commercial ecologically safetechnologies for growing large-area CulnGaSe films and obtaining the thin filmheterophotoelements on the basis of these films [1-4], It is very benefitial task for newenvironmentally oriented European economics, We have long tenn experience with problemhow to develop ecology safe heterophotoelements as high-efficiency photoconverters of solarradiation, First of all we have experiment with CulnSe2/green leafs heterojunctions [5-1 OJ,then we studied thin-film n-ZnO:Al/p-Cu(ln,Ga)Se2 heterojunctions which was fabricated bymagnetron sputtering of an ZnO target, leading to a deposition of Cu(ln,Ga)Se2 films on thesurface [ 11 ], This study is a continuation of the important line of research in modernphotoenergy engineering and is concerned with development of the technology of cadmiumfree Cu(ln, Ga)Sei/ln2S3 thin film heterophotoelements,The method of heat treatment of metallic Cu-In-Ga layers in the N2 inert atmosphere in thepresence of selenium and sulfur vapors was used to grow homogeneous films of Cu(ln,Ga)(S,Se)2 alloys onto which the CdS or ln2S3 films were deposited and, on the basis of thesestructures, the thin-film glass/Mo/p-Cu(ln, Ga) (S, Se)i/n-(ln2S3,CdS)/n-ZnO/Ni-AIphotoelements were fabricated, The mechanisms of charge transport and the processes ofphotosensitivity in the obtained structures subjected to irradiation with natural and linearlypolarized light are discussed, The broadband photosensitivity of thin-filmheterophotoelements and the induced photopleochroism were detected; these findings indicatethat there is an interference-related blooming of the structures obtained,It is concluded that it is possible to use ecologically safe cadmium-free thin-filmheterostructures as high-efficiency photoconverters of solar radiation,
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