Optimization of sodium carbonate texturization on large-area crystalline silicon solar cells

Marrero, N.; González‐Díaz, Benjamín; Guerrero‐Lemus, Ricardo; Borchert, D.; Hernández-Rodríguez, C.

doi:10.1016/j.solmat.2007.08.001

Cited by 46 publications

(29 citation statements)

References 12 publications

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“…To eliminate isopropyl alcohol, some researchers used other solutions, like sodium carbonate (Na2CO3), sodium hydrogen carbonate (NaHCO3), potassium carbonate (K2CO3), potassium hydrogen carbonate (KHCO3), tribasic sodium phosphate (Na3PO4), tripotassium phosphate (K3PO4) [9][10][11]. Some researchers have reported the texturization with tribasic sodium phosphate (Na3PO4) and found that the Na3PO4 plays the role of a surface active agent and makes texturization more effective without IPA [12][13]. We are reporting the use of tripotassium phosphate (K3PO4) and Potassium silicate (K2SiO3) solution for the texturization on silicon surface in different condition [14][15].…”

Section: Introductionmentioning

confidence: 99%

Texturization of Monocrystalline Silicon Wafers with K3PO4 /K2sio3 Solutions under Different Conditions

Luo¹,

Man²,

Zheng³

et al. 2016

Proceedings of the 2015 International Conference on Materials Chemistry and Environmental Protection (Meep-15)

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Abstract-The pyramid construction was formed with different K3PO4 concentrations under different time and temperatures. The pyramid size, density and uniformity on monocrystalline silicon surface have been studied. We found that the K3PO4 concentrations and temperature has a crucial influence on pyramid density; the time has a significant influence on pyramid size. With the time increasing (from 5min to 30min), the size varies from 1.2 to 3.7μm. The density varies from 0% to 52.2%, with the temperature increasing (from 30℃ to 90℃). The pyramid size and density obtained in the optimal K3PO4 concentrations (30wt% K3PO4, 2wt K2SiO3, 85℃, and 5 min) are close to 1.3μm and 48.0%. The uniform pyramids are obtained in the optimal temperature (30wt% K3PO4, 2wt% K2SiO3, 90℃, and 5 min), its biggest size of pyramid is 3.1 μm and mean size is 1.1μm. Furthermore, the average reflectivity of silicon surface has also been studied. For the textured silicon surface, the average reflectivity obtained in the optimal etching conditions (6wt% K3PO4+ 2wt% K2SiO3, 85℃, and 20 min) is close to 11.6%. This technique provides an alternative way for production high-efficiency silicon solar cells.

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Section: Introductionmentioning

confidence: 99%

Texturization of Monocrystalline Silicon Wafers with K3PO4 /K2sio3 Solutions under Different Conditions

Luo¹,

Man²,

Zheng³

et al. 2016

Proceedings of the 2015 International Conference on Materials Chemistry and Environmental Protection (Meep-15)

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“…Texturization for monocrystalline silicon solar cells has been widely used with the key of increasing the conversion efficiency [1,2] . Texturization of the surface of {100} monocrystalline silicon wafer by anisotropic etching is effective to formation of uniformly distributed pyramidal structures on the surface, the structures which geometries allow light to be more easily coupled and efficiently absorbed into the solar cells [3,4] .…”

Section: Introductionmentioning

confidence: 99%

Investigation of Texturization for Monocrystalline Silicon Wafers with NaOH and Na2B4O7 U10H2O Solutions

Chen¹,

Zhang²,

Man³

et al. 2016

Proceedings of the 2016 6th International Conference on Machinery, Materials, Environment, Biotechnology and Computer

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Abstract. NaOH and Na 2 B 4 O 7 ·10H 2 O solutions of texturization were investigated and a series of comparative experiments were made by our group. The surface microstructures studied with a scanning electronic microscope (SEM). The different etching time and the different concentration of the solution have a larger effect on the pyramid density and the pyramid size. The SEM pictures showed that the surfaces covered with more perfect uniformly pyramid structures was obtained after texturing with NaOH of 2wt% and Na 2 B 4 O 7 ·10H 2 O of 2wt% solutions at 80℃ and 25min. The pyramid density was 81.8% and the mean size was 1.75μm. This result showed the method based on NaOH and Na 2 B 4 O 7 ·10H 2 O solutions was a promising method for large-scale industrial applications for Raman basal.

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“…Moreover, the low boiling point of IPA limits the process temperature, and etching rates also diminish as process temperature is lowered, so longer times are required to complete the surface texturization [5]. As a result of these disadvantages, some researchers used other solutions, like sodium carbonate (Na 2 CO 3 ), sodium hydrogen carbonate (NaHCO 3 ), potassium carbonate (K 2 CO 3 ), potassium hydrogen carbonate (KHCO 3 ), tribasic sodium phosphate (Na 3 PO 4 ), tripotassium phosphate (K 3 PO 4 ) [6][7]. Some researchers have reported the texturization with tribasic sodium phosphate (Na 3 PO 4 ) and found that the Na 3 PO 4 plays the role of a surface active agent and makes texturization more effective without IPA [8].…”

Section: Introductionmentioning

confidence: 99%

Texturization of Monocrystalline Silicon Wafers with K3PO4 and K2SiO3 Solutions

Luo¹,

Ma²,

Man³

et al. 2015

Proceedings of the 2015 International Conference on Electromechanical Control Technology and Transportation

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Optimization of sodium carbonate texturization on large-area crystalline silicon solar cells

Cited by 46 publications

References 12 publications

Texturization of Monocrystalline Silicon Wafers with K3PO4 /K2sio3 Solutions under Different Conditions

Texturization of Monocrystalline Silicon Wafers with K3PO4 /K2sio3 Solutions under Different Conditions

Investigation of Texturization for Monocrystalline Silicon Wafers with NaOH and Na2B4O7 U10H2O Solutions

Texturization of Monocrystalline Silicon Wafers with K3PO4 and K2SiO3 Solutions

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