Optimization of pre-amorphization and dopant implant conditions for advanced annealing

Felch, S.B.; Graoui, H.; Tsai, Gene; Mayur, A. J.

doi:10.1016/j.nimb.2005.04.075

Cited by 13 publications

(9 citation statements)

References 1 publication

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“…As already shown by Felch et al 16 for the submelt laser anneal, the sheet resistance decreases as the Ge + implantation energy is increased, going in our case ͑at 500 mJ/ cm 2 ͒ from 1024 ⍀ / sq at 5 keV to 521 ⍀ / sq at 10 keV.…”

Section: Sheet Resistance and Leakage Current Measurementssupporting

confidence: 84%

Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing

Vervisch¹,

Etienne²,

Torregrosa³

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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To achieve the requirements of the 45 nm ITRS technology node and beyond, beamline implantation has reached its limit in terms of low energies. Plasma immersion ion implantation ͑PIII͒ is thus an alternative doping technique for the formation of ultrashallow junctions for source/ drain extension in silicon devices. In this study, the authors present some results obtained on the PIII prototype called PULSION ® designed by the IBS French company. In previous works ͓F. Torregrosa et al., ͑unpublished͒, p. 6͔, it has been shown that this machine offers the possibility to reach ultralow energy implantations and then to obtain implantation depths of only a few nanometers. One of the main issues is then to highly activate these junctions with a limited diffusion of dopants. Wafers have been implanted by PULSION ® with acceleration voltages from 1 to 2 kV at saturation dose, with or without preamorphization implantation ͑PAI͒. Then, they have been annealed by a XeCl excimer laser with a wavelength of 193 nm, with energy densities from 275 to 600 mJ/ cm 2 and several shots. Electrical and physicochemical characterizations such as secondary-ion-mass spectrometry, four-point probe, and optical noncontact measurements were then performed. In this article, the authors investigate the effects of PAI, implantation parameters, and laser fluence on the junction specifications ͑depth, sheet resistance, and leakage current͒.

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Section: Sheet Resistance and Leakage Current Measurementssupporting

confidence: 84%

Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing

Vervisch¹,

Etienne²,

Torregrosa³

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…It has been shown in a previous work that the Ge PAI limits the channelling effect [15] and, for PULSION 1 1 kV process, reduces the implantation depth from 20 nm down to 12 nm [11]. In our case, we present electrical measurements as a function of the ArF laser fluence in Fig.…”

Section: Resultsmentioning

confidence: 92%

“…2 shows the typical evolution of the sheet resistance as a function of the laser energy density. These results are presented for the excimer laser sources (ArF, KrF and XeCl) with different pulse durations (15,35 and 50 ns respectively). Each annealing is realized with a 4-shot overlap on a wafer without pre-amorphization.…”

Section: Methodsmentioning

confidence: 99%

Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation (PIII)

Vervisch

Larmande

Delaporte

et al. 2009

Applied Surface Science

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“…On the other hand, the silicide technique may also influence the resistance of source or drain [3] and the mobility of channel carriers [18]. Several new processes were introduced to improve the silicide film quality, including pre-amorphization-implantation (PAI) with Ge ions [5], a Si cap layer on the top of S/D junction [2][3]. However, to our knowledge, there have been few papers describing the effect of these novel silicide methods on the electrical properties of silicided junction, S/D series resistance and carriers mobility in the channel.…”

Section: Introductionmentioning

confidence: 99%

The influence of silicide technique on the device performance for deep sub-micro pMOSFETs

Liao

Chang

et al. 2012

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

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We investigate the junction leakage current and device performance for 45nm SiGe/Si pMOSFETs using various silicide technology. It is found that with the conventional Ni silicide method, the leakage current of a SiGe/Si junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method. In addition, Si-cap methods show the best current voltage characteristic for MOSFETs. The characteristic improvement could be associated with the suppression of the agglomeration of the Ni germano-silicide film. Our results show the novel Ni silicide method using a Si cap is the most promising choice for SiGe junctions in advanced technology.

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Optimization of pre-amorphization and dopant implant conditions for advanced annealing

Cited by 13 publications

References 1 publication

Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing

Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing

Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation (PIII)

The influence of silicide technique on the device performance for deep sub-micro pMOSFETs

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