Abstract:We investigate the junction leakage current and device performance for 45nm SiGe/Si pMOSFETs using various silicide technology. It is found that with the conventional Ni silicide method, the leakage current of a SiGe/Si junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method. In addition, Si-cap methods show the best current voltage characteristic … Show more
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