Optimization of Ohmic Contacts to 
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-Type 
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 Nanowires

Hüttenhofer, Ludwig; Xydias, D.; Lewis, Ryan B.; Rauwerdink, Sander; Tahraoui, A.; Küpers, Hanno; Geelhaar, Lutz; Marquardt, Oliver; Ludwig, Stefan

doi:10.1103/physrevapplied.10.034024

Cited by 7 publications

(3 citation statements)

References 27 publications

(42 reference statements)

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“…These findings correlate favorably well with the reference (Han et al , 2020) and further support the concept of thermionic emission and tunneling current in the Schottky barrier-based MOSFETs at high temperatures. Another reason could be attributed to a decrease in the specific contact resistance between the SiC nanowire and the electrodes with the temperature rise (Hüttenhofer et al , 2018). As for the decrease in current after increasing the temperature from 150°C to 350°C, we believe that it is related to the temperature dependence of carrier mobility on phonon scattering.…”

Section: Resultsmentioning

confidence: 99%

High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications

Mousa

Teker

2021

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Purpose The purpose of this study is to present a systematic investigation of the effect of high temperatures on transport characteristics of nitrogen-doped silicon carbide nanowire-based field-effect transistor (SiC-NWFET). The 3C-SiC nanowires can endure high-temperature environments due to their wide bandgap, high thermal conductivity and outstanding physical and chemical properties. Design/methodology/approach The metal-organic chemical vapor deposition process was used to synthesize in-situ nitrogen-doped SiC nanowires on SiO2/Si substrate. To fabricate the proposed SiC-NWFET device, the dielectrophoresis method was used to integrate the grown nanowires on the surface of pre-patterned electrodes onto the SiO2 layer on a highly doped Si substrate. The transport properties of the fabricated device were evaluated at various temperatures ranging from 25°C to 350°C. Findings The SiC-NWFET device demonstrated an increase in conductance (from 0.43 mS to 1.2 mS) after applying a temperature of 150°C, and then a decrease in conductance (from 1.2 mS to 0.3 mS) with increasing the temperature to 350°C. The increase in conductance can be attributed to the thermionic emission and tunneling mechanisms, while the decrease can be attributed to the phonon scattering. Additionally, the device revealed high electron and hole mobilities, as well as very low resistivity values at both room temperature and high temperatures. Originality/value High-temperature transport properties (above 300°C) of 3C-SiC nanowires have not been reported yet. The SiC-NWFET demonstrates a high transconductance, high electron and hole mobilities, very low resistivity, as well as good stability at high temperatures. Therefore, this study could offer solutions not only for high-power but also for low-power circuit and sensing applications in high-temperature environments (∼350°C).

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Section: Resultsmentioning

confidence: 99%

High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications

Mousa

Teker

2021

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“…6) In order to achieve good performance, the contacts resistance between n-GaAs contact layer and the electrode should be small and current-independent. 7) But it is easy to form a Schottky contact due to band bending between the semiconductor and metal, which reduces carrier transmission and results in nonlinear current-voltage performances. 8) The AuGe/Ni/Au metal systems have been widely used as the electrode on n-GaAs contact layer, because they have low contact resistance and good ohmic contact.…”

Section: Introductionmentioning

confidence: 99%

Optimization of ohmic contact on n-type GaAs by screen-printing silver paste

Sun¹,

Long²,

Dai³

et al. 2020

Jpn. J. Appl. Phys.

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We used printed electronics technology to print silver paste (SP) on n-GaAs as an electrode replacing conventional alloy electrodes to simplify the fabrication process of solar cell and to reduce cost. The linear transmission line model was used to characterize the performances of SP/semiconductor ohmic contact at different annealing temperatures. The lowest specific contact resistance between SP and n-GaAs of 1.8 × 10−4 Ω cm2 was achieved after annealing at 560 °C, which indicates the appropriate annealing temperature can not only ensure the close contact of silver particles, but also reduce the barrier height of metals and semiconductors to a certain extent. On the basis of these results, n-GaAs with an SP electrode can be promisingly applied to realize highly efficient and simple-manufacturing III–V solar cells.

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“…For instance, the ability to grow defect-free III-V NWs on silicon (Si) allows for the direct growth of III-V/Si tandem solar cells [13]. Doping is a key element for optimal operation of the devices like ohmic contacts [14] or efficient carrier collection [15]. Owing to the small dimensions of NWs, the realization of radial or axial p-n junctions requires a very tight control of the doping conditions during the epitaxial growth.…”

Section: Introductionmentioning

confidence: 99%

Quantitative Assessment of Carrier Density by Cathodoluminescence. II. GaAs nanowires

Chen,

De Lépinau,

Scaccabarozzi

et al. 2019

Preprint

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Precise control of doping in single nanowires (NWs) is essential for the development of NW-based devices. Here, we investigate a series of MBE-grown GaAs NWs with Be (p-type) and Si (n-type) doping using high-resolution cathodoluminescence (CL) mapping at low-and room-temperature. CL spectra are analyzed selectively in different regions of the NWs. Room-temperature luminescence is fitted with the generalized Planck's law and an absorption model, and the bandgap and band tail width are extracted. For Be-doped GaAs NWs, the bandgap narrowing provides a quantitative determination of the hole concentration ranging from about 1 × 10 18 to 2 × 10 19 cm −3 , in good agreement with the targeted doping levels. For Si-doped GaAs NWs, the electron Fermi level and the full-width at half maximum of low-temperature CL spectra are used to assess the electron concentration to approximately 3 × 10 17 to 6 × 10 17 cm −3 . These findings confirm the difficulty to reach highly-doped n-type GaAs NWs, may be due to doping compensation. Notably, signatures of high concentration (5-9×10 18 cm −3 ) at the very top of NWs are unveiled.

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Optimization of Ohmic Contacts to n -Type GaAs Nanowires

Cited by 7 publications

References 27 publications

High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications

High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications

Optimization of ohmic contact on n-type GaAs by screen-printing silver paste

Quantitative Assessment of Carrier Density by Cathodoluminescence. II. GaAs nanowires

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