Optimization of ohmic contact on n-type GaAs by screen-printing silver paste

Abstract

We used printed electronics technology to print silver paste (SP) on n-GaAs as an electrode replacing conventional alloy electrodes to simplify the fabrication process of solar cell and to reduce cost. The linear transmission line model was used to characterize the performances of SP/semiconductor ohmic contact at different annealing temperatures. The lowest specific contact resistance between SP and n-GaAs of 1.8 × 10−4 Ω cm2 was achieved after annealing at 560 °C, which indicates the appropriate annealing temperature can not only ensure the close contact of silver particles, but also reduce the barrier height of metals and semiconductors to a certain extent. On the basis of these results, n-GaAs with an SP electrode can be promisingly applied to realize highly efficient and simple-manufacturing III–V solar cells.

Flexible Encapsulation and Module of Thin‐Film GaInP/GaAs/InGaAs Solar Cells

“…Inverted metamorphic triple-junction solar cell epitaxial wafers require bonding, deposition, etching, and other processes to obtain effective devices. [26,27] Figure 1b shows the process flowcharts of devices fabrication. Ti/Pt/Au was deposited on the epitaxial wafer as the P-type electrode, and then the Ohmic contact was formed by rapid thermal annealing between the electrode metal and the epitaxial layer.…”