Optimization of Nitridation and Re-oxidation Conditions for an EEPROM Tunneling Dielectric

Some Considerations on TunnelingLosses in Field‐Effect Devices for Low‐Voltage Microcontrollers

“…Since E Vox/tox (where Vox is the voltage drop across the tunnel oxide and tox is the oxide thickness), formula (3) is a good approximation because, in practice, tox must be small (typically tox 100,; see, for example, Ref. [6] ) so that E becomes high. Then, from Eq.…”

“…Certainly, decreasing of Vox and a relatively small value of tox produce a moderate value of E; for a discussion on values of tox, see Refs. [2,6]. At any rate, optimization of the tunnel oxide thickness constitutes a crucial problem.…”