Optimization of ITO layers for applications in a-Si/c-Si heterojunction solar cells

Plá, Juan Carlos; Tamasi, Mariana Julia Luisa; Rizzoli, R.; Losurdo, Maria; Centurioni, E.; Summonte, C.; Rubinelli, Francisco Alberto

doi:10.1016/s0040-6090(02)01143-4

Cited by 83 publications

(36 citation statements)

References 14 publications

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“…This is previously discussed by Christou et al 15 and Gassenbauer et al 16 The two O 1s components found at the Si wafer surface (531.9 and 532.6 eV) are most likely due to water molecules and contamination adsorbed at the substrate surface, originated from the DI water rinsing or exposure to air. The values coincide with the binding energies for hydroxides, contamination, and oxygen due to air exposure (531:7 6 0:2 and 532:7 6 0:2 eV) reported by Pl a et al 17 Hydroxides are plausible as the substrate was cleaned in HF and rinsed in DI water. OH groups at Si(100) wafers after HF etch and DI water rinsing are previously detected using high resolution electron energy loss spectroscopy (HREELS).…”

supporting

confidence: 87%

An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

Rein

Hohmann

Thøgersen

et al. 2013

Applied Physics Letters

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The interface between indium tin oxide and p-type silicon is studied by in situ X-ray photoelectron spectroscopy (XPS). This is done by performing XPS without breaking vacuum after deposition of ultrathin layers in sequences. Elemental tin and indium are shown to be present at the interface, both after 2 and 10 s of deposition. In addition, the silicon oxide layer at the interface is shown to be composed of mainly silicon suboxides rather than silicon dioxide.

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supporting

confidence: 87%

An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

Rein

Hohmann

Thøgersen

et al. 2013

Applied Physics Letters

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“…Sn is found to be either in Sn(II) or Sn(IV) form). [52][53][54][55][56][57] The tin is more likely in the Sn(IV) form as in SnO 2 . [52][53][54][55][56] The binding energy for Sn is also in accordance with a Sn chloride complexes.…”

Section: Discussionmentioning

confidence: 99%

Electroless Copper Deposition Using Sn/Ag Catalyst on Epoxy Laminates

Uzunlar

Wilson

Kohl

2013

J. Electrochem. Soc.

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Electroless copper deposition was investigated on epoxy laminate substrates (Isola 185HR) using a silver-based catalyst, and a nonroughening surface treatment method based on sulfuric acid. The current challenges in electroless copper deposition include (i) high cost of Pd-based catalysts, (ii) deterioration of electrical performance of deposited metal at high frequency due to electron scattering at the roughened surface, and (iii) limited adhesion strength of electroless layers to substrates. We investigated an electroless copper deposition procedure composed of a H 2 SO 4 surface pretreatment, two-step Sn/Ag nano-colloidal catalyst seeding, and immersion in a traditional formaldehyde-containing electroless copper bath. The H 2 SO 4 pretreatment activated the epoxy surface for electroless deposition. Other strong acids did not lead to deposition. The H 2 SO 4 treatment cleaned the substrate and provided the adhesion of the catalyst and electroless copper without increasing the surface roughness. XPS results showed a decrease in the carbonyl groups (C=O), and acid/ester functionalities (O-C=O) at the surface. Adsorbed sulfate on the substrate from the H 2 SO 4 treatment led to Sn(II) sensitization. The tin-silver activation step resulted in Sn(IV) and Ag(0) products in the form of a Sn/Ag nano-colloidal catalyst. The Sn/Ag colloid acted as a catalyst for electroless copper deposition on the epoxy laminate substrates.

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“…The observed 70 mV improvement of V OC of G based devices is therefore explained with a work function for ITO not larger than 4.58-4.63 eV, which is compatible with device quality, highly conductive ITO [2,45,46]. The persistence of V OC for thermally treated G indicates that the work function of the TCL does not vary with annealing, and therefore [2] that unappreciable E F shift takes place in G membranes.…”

Section: Discussionmentioning

confidence: 65%

Graphene as transparent conducting layer for high temperature thin film device applications

Veronese

Allegrezza

Canino

et al. 2015

Solar Energy Materials and Solar Cells

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Optimization of ITO layers for applications in a-Si/c-Si heterojunction solar cells

Cited by 83 publications

References 14 publications

An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

Electroless Copper Deposition Using Sn/Ag Catalyst on Epoxy Laminates

Graphene as transparent conducting layer for high temperature thin film device applications

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