Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors

Chen, X.Y.; Gu, Yizhou; Zhang, YG; Xi, Suping; Guo, Zuoxing; Li, Zhou; Li, A.Z.; Li, Hsby

doi:10.1016/j.jcrysgro.2015.02.102

Cited by 12 publications

(5 citation statements)

References 16 publications

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“…Again, a very narrow FWHM (~270 arcsec) is measured from the diffraction peak of the InGaAs layer. The FWHM value measured here is only about half of the reported values from InGaAs layers grown on InP and GaAs substrates using metamorphic buffers [12,13]. Such a low FWHM indicates high quality of the InGaAs layers.…”

Section: Resultscontrasting

confidence: 60%

2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique

Jurczak

Sablon

Gutiérrez

et al. 2017

Infrared Physics & Technology

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In0.85Ga0.15As photodetectors grown on GaAs substrates using an interfacial misfit array-based simple buffer are studied. The material quality is assessed with a range of characterization tools showing low surface roughness and low density of threading dislocations. These results indicate a significant improvement on crystal quality compared to structures grown on InP substrates by using metamorphic buffers. Quantum efficiency and responsivity measurements show good performance of the fabricated devices between 1.5 and 2.5 µm, making them highly suitable for short-wavelength infrared applications.

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Section: Resultscontrasting

confidence: 60%

2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique

Jurczak

Sablon

Gutiérrez

et al. 2017

Infrared Physics & Technology

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“…However, the lattice mismatch increases about 4% more for the InGaAs with the same indium content, which can further depredate the performance of the device. The work on In x Ga 1−x As PDs and FPAs of x > 0.53 on GaAs substrate are still done recently by using MBE and MOVPE, including our work [84][85][86][87] and those of other groups. [88,89] The main purpose is to gain the knowledge of higher lattice mismatch.…”

Section: Wavelength-extended Ingaas Pds and Fpasmentioning

confidence: 99%

Short-wave infrared InGaAs photodetectors and focal plane arrays

et al. 2018

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In this article, unique spectral features of short-wave infrared band of 1 µm-3 µm, and various applications related to the photodetectors and focal plane arrays in this band, are introduced briefly. In addition, the different material systems for the devices in this band are outlined. Based on the background, the development of lattice-matched and wavelengthextended InGaAs photodetectors and focal plane arrays, including our continuous efforts in this field, are reviewed. These devices are concentrated on the applications in spectral sensing and imaging, exclusive of optical fiber communication.

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“…In this work, four In 0.83 Ga 0.17 As PD structures with different buffer schemes were grown by GSMBE on S.I. (1 0 0)-oriented GaAs epi-ready substrates [38]. Each structure consisted of a 2.5-μm N + InAlAs MBL and a 1.5-μm n − In 0.83 Ga 0.17 As absorption layer followed by a 530 nm P + InAlAs cap.…”

Section: Optimization Of Inalas Metamorphic Buffer On Gaas With Relatmentioning

confidence: 99%

Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch

Chen¹,

Yuan²,

Zhang³

2018

Epitaxy

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co-workers develop an h-BN/MoTe 2 /graphene/SnS 2 /h-BN van der Waals heterostructure to realize an ultrahigh-sensitivity broadband (405-1550 nm) photodetector, due to its unique advantages for high-efficiency light absorption and exciton dissociation. Graphene plays a key role in enhancing the sensitivity and broadening the spectral range, providing a viable approach toward future ultrahigh sensitivity and broadband photodetectors.

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Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors

Cited by 12 publications

References 16 publications

2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique

2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique

Short-wave infrared InGaAs photodetectors and focal plane arrays

Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch

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