Optimization of growth parameters for growth of high quality heteroepitaxial 3C–SiC films at 1200°C

Wilhelm, Martin; Rieth, M.; Brandl, Marco; Wibowo, Rachmat Adhi; Hock, Rainer; Wellmann, Peter J.

doi:10.1016/j.tsf.2015.01.049

Cited by 12 publications

(13 citation statements)

References 25 publications

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“…As seen in FIGURE 6, the FWHM decreased as the film thickness increased. This trend is also seen in other heteroepitaxial material systems such as GaN on sapphire [25,26] and 3C-SiC on Si [27] and was most likely due to relaxation of the lattice and annihilation of defects as the films grew thicker [28].…”

mentioning

confidence: 57%

Hydride CVD Hetero-epitaxy of B12P2 on 4H-SiC

Frye

Saw

Padavala

et al. 2017

Journal of Crystal Growth

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Icosahedral boron phosphide (B 12 P 2) is a wide bandgap semiconductor (3.35 eV) that has been reported to "selfheal" from high-energy electron bombardment, making it attractive for potential use in radioisotope batteries, radiation detection, or in electronics in high radiation environments. This study focused on improving B 12 P 2 hetero-epitaxial films by growing on 4H-SiC substrates over the temperature range of 1250-1450 • C using B 2 H 6 and PH 3 precursors in a H 2 carrier gas. XRD scans and Laue transmission photographs revealed that the epitaxial relationship was (0001) 1120 B 12 P 2 (0001) 1120 4H-SiC. The film morphology and crystallinity were investigated as a function of growth temperature and growth time. At 1250 • C, films tended to form rough, polycrystalline layers, but at 1300 and 1350 • C, films were continuous and comparatively smooth (R RMS ≤ 7 nm). At 1400 or 1450 • C, the films grew in islands that coalesced as the films became thicker. Using XRD rocking curves to evaluate the crystal quality, 1300 • C was the optimum growth temperature tested. At 1300 • C, the rocking curve FWHM decreased with increasing film thickness from 1494 arcsec for a 1.1 μm thick film to 954 arcsec for a 2.7 μm thick film, suggesting a reduction in defects with thickness.

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mentioning

confidence: 57%

Hydride CVD Hetero-epitaxy of B12P2 on 4H-SiC

Frye

Saw

Padavala

et al. 2017

Journal of Crystal Growth

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“…In the Raman spectra only peaks attributed to 3C‐SiC are visible, indicating the polytype stability of the growth process. A measure to describe the crystal quality in terms of single crystallinity is the proportion of the intensities of the transversal optical (TO) phonon peak at around 796 cm −1 and the longitudinal optical (LO) phonon peak at around 974.5 cm −1 . The TO peak is Raman forbidden, but can occur with the help of defects, making it an indicator for the crystal quality.…”

Section: Resultsmentioning

confidence: 99%

“…For CVD grown 3C‐SiC layers, a peak shift to smaller wavenumbers due to tensile strain is reported in Ref. . In Ref.…”

Section: Resultsmentioning

confidence: 99%

Growing bulk-like 3C-SiC from seeding material produced by CVD

Schuh¹,

Arzig²,

Litrico

et al. 2017

Phys. Status Solidi A

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We present a process to transfer CVD grown heteroepitaxial 3C‐SiC on Si onto polycrystalline SiC, involving an etching step to get rid of the Si and a homogeneous carbon glue deposit, facilitating the resulting compound to be used as a seeding material for further growth process. In a sublimation sandwich setup, realized within an inductively heated physical vapor transport reactor, used for bulk growth of SiC, the thickness of the 3C‐SiC seed was increased up to 850 μm while keeping the cubic polytype. With the introduction of Ta as a carbon getter, the gas phase composition is optimized in order to achieve an improved growth front. Single crystalline growth is confirmed by Laue diffraction and Raman measurements. The Raman peaks are shifted to higher wavenumbers, indicating compressive stress in the grown samples. Furthermore, a scale up of the process is demonstrated, showing the feasibility of growing 3C‐SiC on an area of 10.5 cm2 in a 2 inch setup featuring a thickness of approximately 570 μm.

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“…For the C/Si < 1.6, the FWHM of the LO-Raman mode decreased as the C/Si Moore ratio increased, indicating better layer quality in terms of single crystal growth. According to the reports of Wilhelm M. and Bosi M. [8,24], the crystal quality of 3C-SiC films could be obtained by comparing the relative intensities of LO and TO peaks of 3C-SiC films. Their studies showed that the crystal quality increased with the increase of LO to TO peak ratio.…”

Section: Fig 8 the Rocking Curve Scans Of 3c-sic Films Grown Onmentioning

confidence: 99%

Effect of C/Si Moore Ratio on the Morphology and Crystallinity of 3C-SiC/Si(100) by the Modified Two-Step Carbonization Process

Mao

Wang

et al. 2017

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A modified two-step carbonization process was used to grow high oriented 3C-SiC films on Si (100) substrates by using SiH4 and C3H8 as precursors. The investigation revealed that the C/Si Moore ratio has important influence on the SiC nucleation model on Si substrates and the crystal quality of 3C-SiC films. The effect of C/Si Moore ratio on the SiC/Si (100) were evaluated by Microscopy and SEM. This indicated that the growth model of the individual nuclei gradually changed from vertical to lateral growth as the C/Si Moore ratio increased. High-resolution X-ray diffraction and Raman spectra were used to analyze the crystalline quality of 3C-SiC films grown at 1385 °C under different C/Si ratios. The results showed that the optimum C/Si Moore ratio for high oriented and high crystal quality 3C-SiC films was 1.6. The mirro-like high-crystallinity 3C-SiC films on the Si (100) are grown with a 1.6 C/Si ratio at 1385 °C for 1hr. XRD results showed that the diffraction intensity of 3C-SiC (200) peak was very closed to that of Si (400) peak and the FWHM value of it was about 0.19°. The surface roughness was 3.6 nm.

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Optimization of growth parameters for growth of high quality heteroepitaxial 3C–SiC films at 1200°C

Cited by 12 publications

References 25 publications

Hydride CVD Hetero-epitaxy of B12P2 on 4H-SiC

Hydride CVD Hetero-epitaxy of B12P2 on 4H-SiC

Growing bulk-like 3C-SiC from seeding material produced by CVD

Effect of C/Si Moore Ratio on the Morphology and Crystallinity of 3C-SiC/Si(100) by the Modified Two-Step Carbonization Process

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