Abstract:Optimization of GaN channel conductivity in AlGaN/GaN Heterojunction Field Effect Transistor (HFET) structures was performed using High Resistivity (HR) GaN templates grown by Metal-organic Vapor Phase Epitaxy (MOVPE). The GaN sheet resistance was tuned using final nucleation layer (NL) annealing temperature. Using an annealing temperature of 1033°C, GaN with sheet resistance of 10 Ω/sq was achieved, comparable to that of Fe-doped GaN. X-Ray Diffraction (XRD) and Photoluminescence (PL) analysis show that the h… Show more
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