Insulated Gate Nitride-Based Field Effect Transistors

Shur, M. S.; Simin, Grigory; Rumyantsev, Sergey; Jain, Rahul; Gaška, R.

doi:10.1007/978-1-4419-1547-4_13

Cited by 5 publications

(4 citation statements)

References 128 publications

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“…Insulated gate heterostructure HFETs (MOSHFETs) demonstrated superior performance and reliability. 35 , 36 The market for GaN power FETs in 2011 was very small (~2.5 M US$) with only two companies (International Rectifiers and EPC Corp.) selling such products. However, quite a few companies are pursuing GaN power HEMT technology (mostly GaN on Si), including not only EPC and International Rectifiers but also SANVIK, Fujitsu, Matsushita, RFMD, and Sensor Electronic Technology, Inc.…”

Section: Device Design and Performancementioning

confidence: 99%

Physics of GaN-based Power Field Effect Transistors

Shur¹

2013

ECS Trans.

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Unique properties of GaN/AlN/InN heterostructures make them superior for high power applications. The key issues in the device designs are achieving normally-off operation, controlling the electric field distribution in the device channel to prevent breakdown, eliminating or reducing non-ideal effects causing reliability issues, and providing for efficient heat dissipation. High electric fields at the gate edges lead to an additional strain and hot electron effects causing the current collapse and gate lag. Quantum well designs (e.g. incorporating an InGaN or GaN quantum well between the wide band gap AlGaN barrier layer and GaN or AlGaN buffer) might control the wave function penetration and the real space transfer and increase the breakdown voltage. Insulated gate heterostructure HFETs (MOSHFETs) demonstrated superior performance and reliability. Field plates, recessed and double recessed gates, drain field controlled electrodes have been used to control current collapse and improve device reliability. An emerging approach is Frequency Configurable Electronics that enables better electric field uniformity.

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Section: Device Design and Performancementioning

confidence: 99%

Physics of GaN-based Power Field Effect Transistors

Shur¹

2013

ECS Trans.

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“…AlGaN/GaN long-periphery high electron mobility transistors (HEMTs) grown ON semi-insulating SiC substrates with high thermal conductivity are currently widely used in various high-power applications. 1 The main obstacle to even wider use of such devices is the presence of trapping effects in the HEMTs. Defects at the surface of the AlGaN barriers, at the AlGaN/GaN interface, and in the GaN buffers can capture and emit electrons and holes which results in several effects, including the drift of the transistor threshold voltage, phase lag between the voltage and current pulses applied to the gate and drain and degradation (reversible or irreversible) of transistor characteristics under high-current operation 2,3 ).…”

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confidence: 99%

“…Defects at the surface of the AlGaN barriers, at the AlGaN/GaN interface, and in the GaN buffers can capture and emit electrons and holes which results in several effects, including the drift of the transistor threshold voltage, phase lag between the voltage and current pulses applied to the gate and drain and degradation (reversible or irreversible) of transistor characteristics under high-current operation 2,3 ). These phenomena generally known as current collapse [1][2][3][4] limit the attainable power at high frequencies and causes non-linearity and instability of characteristics. Hence there is interest in studying deep traps in AlGaN/GaN HEMTs.…”

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confidence: 99%

Deep Traps in AlGaN/GaN High Electron Mobility Transistors on SiC

Polyakov

Smirnov

Dorofeev

et al. 2016

ECS J. Solid State Sci. Technol.

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Capacitance-voltage (C-V) and current-voltage (I-V) characteristics and deep trap spectra were measured for high-power HEMT structures grown by metallorganic chemical vapor deposition on semi-insulating 4H-SiC substrates and comprised of an AlGaN barrier and GaN(Fe) semi-insulating buffer with the upper (∼100 nm) portion unintentionally doped and lightly n-type. The C-V measurements were performed in the 85–400 K range in the dark and showed a decrease in the threshold voltage for temperatures higher than 200 K. The change was most prominent for temperatures from 290 K to ∼330 K and occured due to deep traps capturing electrons in the AlGaN barrier and near the AlGaN/GaN interface. C-V measurements at low temperature showed that the traps in the AlGaN barrier are located near Ec−2 eV and have a density of ∼1012 cm−2, while the traps at the interface have an optical ionization threshold near 1.7 eV and the density of ∼4 × 1012 cm−2. Capacitance deep level transient spectroscopy (DLTS) and current DLTS (CDLTS) revealed electron traps with levels near Ec−0.56 eV and hole traps with levels near Ev+0.9 eV and Ev+0.5 eV. The Ec−0.56 eV traps are known to be located near the AlGaN/GaN interface in the GaN buffer. The Ev+0.9 eV hole traps are located in the buffer.

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“…The resistivity of SiNM suggests an acceptor doping level N A of about 10 15 cm −3 [38]. At 300 K, the valence band effective state concentration N V of Si is approximately 10 10 cm −3 [39]. In this non-degenerate case, the difference between semiconductor Fermi level E F and valence band E V can be estimated by…”

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confidence: 99%

Schottky contact on ultra-thin silicon nanomembranes under light illumination

Cao

Feng

et al. 2014

Nanotechnology

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By repeating oxidation and subsequent wet chemical etching, we produced ultra-thin silicon nanomembranes down to 10 nm based on silicon-on-insulator structures in a controllable way. The electrical property of such silicon nanomembranes is highly influenced by their contacts with metal electrodes, in which Schottky barriers (SBs) can be tuned by light illumination due to the surface doping. Thermionic emission theory of carriers is applied to estimate the SB at the interface between metal electrodes and Si nanomembranes. Our work reveals that the Schottky contacts with Si nanomembranes can be influenced by external stimuli (like light luminescence or surface state) more heavily compared to those in the thicker ones, which implies that such ultra-thin-film devices could be of potential use in optical detectors.

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Insulated Gate Nitride-Based Field Effect Transistors

Cited by 5 publications

References 128 publications

Physics of GaN-based Power Field Effect Transistors

Physics of GaN-based Power Field Effect Transistors

Deep Traps in AlGaN/GaN High Electron Mobility Transistors on SiC

Schottky contact on ultra-thin silicon nanomembranes under light illumination

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