Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200nm

Kheraj, Vipul; Panchal, C. J.; Patel, Purvi; Arora, B. M.; Sharma, T. K.

doi:10.1016/j.optlastec.2006.10.009

Cited by 15 publications

(5 citation statements)

References 3 publications

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“…Therefore, the suppression of the ES lasing is vital for high-speed QD lasers in the fibre-optic communications. The facet coating is a key technique for improving the performance of the semiconductor lasers and protecting the damage of facets [38,39]. For a typical facet coating technique, the multilayer high and low refractive index materials were deposited with optical thicknesses of λ/ 4, where λ is the lasing wavelength of lasers.…”

Section: Resultsmentioning

confidence: 99%

Carrier dynamics and lasing behavior of InAs/GaAs quantum dot lasers with short cavity lengths

Yao¹,

Wang²,

Chen³

et al. 2021

Nanotechnology

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The modulation p-doping technique has emerged as an effective way to optimize the carrier dynamics process of quantum dot (QD) structures. Here, the laser structures based on the 1.3 μm multiple-layer InAs/GaAs QD were fabricated with and without modulation p-doping. The carrier relaxation rate was increased after modulation p-doping, as demonstrated by transient absorption spectroscopy. The higher relaxation rate in p-doped QDs could be explained by more rapid carrier–carrier scattering process originating from increasing of the hole quasi-Fermi-level movement that increases the probability of occupancy of the valence states. In addition, the lasing behavior of Fabry–Perot lasers with and without modulation p-doping was investigated and compared. It was found that the ground state (GS) lasing in the absence of facet coating was successfully achieved in a p-doped laser diode with short cavity length (400 μm), which can be attributed to the higher GS saturation gain caused by p-doping. With assistance of a designed TiO2/SiO2 facet coating whose central wavelength (∼1480 nm) is far beyond the lasing wavelength of 1310 nm, the GS lasing could be realized in a laser diode with short cavity lengths (300 μm) under continuous wave operation at room temperature, implying great potential for the development of low-cost and high-speed directly modulated lasers.

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Section: Resultsmentioning

confidence: 99%

Carrier dynamics and lasing behavior of InAs/GaAs quantum dot lasers with short cavity lengths

Yao¹,

Wang²,

Chen³

et al. 2021

Nanotechnology

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“…We have applied the optimized AR and HR coatings on the front and the back facet, respectively, of the highly-strained InGaAs quantum-well edge-emitting broad-area (BA) laser diodes operating at 1200 nm, grown by metal-organic vapour phase epitaxy (MOVPE) [11], and achieved the expected enhancement in the optical power emitted from the front facet of the laser diodes [12].…”

Section: Resultsmentioning

confidence: 99%

Simulation of reflectivity spectrum for non-absorbing multilayer optical thin films

et al. 2009

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Reflectivity simulation is an essential tool for the design and optimization of optical thin films. We have developed a reflectivity simulator for non-absorbing dielectric multilayer optical thin films using LabVIEW. The name of the substrate material as well as the material and thickness of each layer of the multilayer stack are fed into the program as input parameters in a pop-up window. The program calculates reflectivity spectrum for the given range of wavelengths using layer thicknesses and dispersion data of refractive indices for the defined stack of dielectric materials. The simulated reflectivity spectra for various combinations of materials in multilayer stacks are presented and compared with the experimental results of the multilayer optical thin films grown by electron-beam evaporation technique.

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“…The choice of scheme depends on the application [9,12]. Facet-passivation schemes were performed through cleaning of facets by uncreative ions (e.g., Argon) before coating and then HR and LR mirror coating on facet with optimized Ar ion beam simultaneously.…”

Section: Methodsmentioning

confidence: 99%

“…Moreover, these coatings were used to protect the lasers from Catastrophic Optical Damage (COD) or mirrors from Catastrophic Optical Mirror Damage (COMD) which are the consequence of colossal optical intensity on the facet mirrors [2,9].…”

Section: Introductionmentioning

confidence: 99%

Improvement and characterization of high-reflective and anti-reflective nanostructured mirrors by ion beam assisted deposition for 944nm high power diode laser

Ghadimi-Mahani

Farsad

Goodarzi

et al. 2015

Optics Communications

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Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200nm

Cited by 15 publications

References 3 publications

Carrier dynamics and lasing behavior of InAs/GaAs quantum dot lasers with short cavity lengths

Carrier dynamics and lasing behavior of InAs/GaAs quantum dot lasers with short cavity lengths

Simulation of reflectivity spectrum for non-absorbing multilayer optical thin films

Improvement and characterization of high-reflective and anti-reflective nanostructured mirrors by ion beam assisted deposition for 944nm high power diode laser

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