Optimization of defected ZnO/Si/Cu2O heterostructure solar cell

Multifractal analysis of ZnO thin films doped with Mg deposited by sol-gel spin coating on a glass substrate

“…(3) Nα(ɛ) is the number of boxes and f(α) is the singularity spectrum of α sub-datasets, which is known as a multifractal spectrum. In random multifractal, the singularity spectrum f(α) can be obtained using partition function χq(ε), as follow [13]: (4) where q (-∞ < q <+∞) is called moment order. τ(q) indicates mass exponent of order q [13]:…”

“…Diversity of structures and the excellent physical properties of metal oxide (MO) semiconductors offer a wide range of favorable features to be used in plethora of optoelectronic devices [1][2][3][4][5].…”

An In-Depth Optimization of Thickness of Base and Emitter of ZnO/Si Heterojunction-Based Crystalline Silicon Solar Cell: A Simulation Method

“…[28][29][30] The optoelectrical properties were studied by varying parameters like thickness and doping concentration of the base and emitter to obtain the best conversion efficiency of solar cell. [31][32][33] In this simulation study, the deposition of a single ZnO layer on the Si substrate to form the single HJ which significantly reduces the average reflectance of the Si wafer by 7.65% in the wavelength range of 400-1000 nm. The ZnO/Si HJ-based c-Si solar exhibits a reasonably high efficiency (η = 24.8%) at a 400 μm base thickness, 20 μm emitter thickness, doping concentration of 1.1 x 10 17 cm -3 in the base and a doping concentration of 5.1 × 10 16 cm -3 in the emitter.…”

An investigation of photovoltaic devices based onp‐typeCu2Oandn‐typeγ‐WO3junction through an electrolyte solution containing a redox pair

“…27,28 Cu 2 O is usually used as a photocathode in p-n heterojunction photovoltaic devices, most commonly with zinc oxide in systems such as n-type ZnO/p-type Cu 2 O, Zn/Si/Cu 2 O, Cd 2 SnO 4 /CdS/Cu 2 O/Ag heterojunctions. 27,29,30 Generally, the film heterojunction occurs from semiconductor film deposition by techniques such as sputtering or plasma deposition, immediately overlapping both types of films. In this way, the p-type and n-type films are put into contact without an electrolyte solution.…”

“…[31][32][33][34][35] The operation of the device with p-n heterojunction occurs due to the difference in charge concentration at the interface of two semiconductors. 36,37 Unfortunately, this type of solar cell still requires expensive technology for film preparation, 29,38,39 as is the case of silicon solar cells, which are p-n heterojunction semiconductors that demand expensive equipment and a large structure for their manufacture, including cleanrooms. Therefore, further studies must be carried out to overcome these drawbacks.…”