Optimization of CuInGaSSe properties and CuInGaSSe/CdS interface quality for efficient solar cells processed with CuInGa precursors

Study on the Performance of Oxygen-Rich Zn(O,S) Buffers Fabricated by Sputtering Deposition and Zn(O,S)/Cu(In,Ga)(S,Se)2 Interfaces

“…It should be noticed that there is an all-dry process and no i-ZnO layer in the case of CIGSSe solar cells with Zn­(O,S) buffer, which could further simplify the fabrication process of CIGSSe solar cells. The preparation processes of other functional layers in this work are similar to that reported in our previous work . An 800 nm-thick Mo back contact was deposited on SLG by direct current magnetron sputtering.…”

“…The preparation processes of other functional layers in this work are similar to that reported in our previous work. 34 An 800 nm-thick Mo back contact was deposited on SLG by direct current magnetron sputtering. Then, CuInGa (CIG) films as the precursors for the CIGSSe absorbers were obtained by sputtering with a ternary CIG alloy target.…”

“…The CIGSSe absorber layers with a thickness of about 1.6 μm were grown subjecting to the sulfuration after the selenization annealing process as discussed in our previous report. 34 We deposited the Zn(O,S) buffer layers (∼50 nm) on the CIGSSe absorber layers. For the reference solar cells, we deposited the CdS buffer layers (∼50 nm) by the CBD method, followed by deposition of the i-ZnO layer (∼80 nm) via sputtering a ZnO target at a substrate temperature of 200 °C.…”

“…Then, CuInGa (CIG) films as the precursors for the CIGSSe absorbers were obtained by sputtering with a ternary CIG alloy target. The CIGSSe absorber layers with a thickness of about 1.6 μm were grown subjecting to the sulfuration after the selenization annealing process as discussed in our previous report . We deposited the Zn­(O,S) buffer layers (∼50 nm) on the CIGSSe absorber layers.…”

Vapor‐Transport‐Deposited Orthorhombic‐SnSe Thin Films: A Potential Cost‐Effective Absorber Material for Solar‐Cell Applications

“…Similar degradation of the device performance, owing to undesired shunt paths, is also observed in the case of other chalcogenide solar cells with a high surface roughness. [47,48] Interestingly, the SnSe/CdS device fabricated with a moderately thick absorber layer (% 1.5 μm; growth duration of 20 min) exhibits improved shunt properties (low J sh and G s ). In this case, the SnSe thin film composed of moderate-sized grains with a modest surface roughness (root-mean-square roughness % 170 nm) exhibited a more uniform deposition of the CdS buffer layer, which significantly reduced the shunt losses at the grain boundaries.…”