Optimization of active region for 1.3-µm GalnAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes

Lei, Po-Hsun; Yang, Chyi-Dar; Wu, Min-Lin; Hu, Chih‐Wei; Huang, Yin-Hsun; Ho, Wen‐Jeng

doi:10.1007/bf02692442

Cited by 3 publications

(1 citation statement)

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“…InP/InGaAsP heterostructures are the main type of structures used for obtaining quantum electronics devices, such as semiconductor lasers, superluminescent radiation sources, and photodiodes with a wavelength range from 1.20 to 1.65 µm which is the most important for the systems of fibre optic communication channels and fibre optic sensors [1][2][3][4][5][6]. The uniqueness of these structures is that InGaAsP solid solutions are isoperiodic to indium phosphide, which allows creating "perfect" heterojunctions suitable for wide application in engineering [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Growing epitaxial layers of InP/InGaAsP heterostructures on the profiled InP surfaces by liquid-phase epitaxy

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et al. 2021

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The effect of various planes was studied when growing epitaxial layers by liquid-phase epitaxy (LPE) on the profiled InP substrates. The studies allowed obtaining buried heterostructures in the InP/InGaAsP system and creating highly efficient laser diodes and image sensors.It was found that protruding mesa strips or in-depth mesa strips in the form of channels formed by the {111}А, {111}B, {110}, {112}A, or {221}A family of planes can be obtained with the corresponding selection of an etching agent, strip orientation, and a method of obtaining a masking coating. It was noted that in the case of the polarity of axes being in the direction of <111>, the cut of mesa strips was conducted along the most densely packaged planes. This cut led to the difference in rates of both chemical etching and epitaxial burying of profiled surfaces.The cut was made along the planes at a low dissolution rate {111}A for a sphalerite lattice, to which the studied material, indium phosphide, belongs. Analysis of planes {110} and {Ī10} showed that the location of the most densely packaged planes {111}A and {111}B relative to them is different.

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