Simulation of Semiconductor Devices and Processes 1995
DOI: 10.1007/978-3-7091-6619-2_69
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Optimization of a Recessed LOCOS using a tuned 2-D process simulator

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Cited by 2 publications
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“…That model incorporates simplified versions of shadowing effects and scattering in the plasma sheath. The components of the flux vector, for etching of an infinite trench, are given at any point by (18) (19) Here, the integral is taken over , which is the solid angle over which the plasma is visible. The function is the flux of particles moving with angle to the local vertical, and is the average energy of those particles.…”
Section: Example: a Reactive Ion Etch Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…That model incorporates simplified versions of shadowing effects and scattering in the plasma sheath. The components of the flux vector, for etching of an infinite trench, are given at any point by (18) (19) Here, the integral is taken over , which is the solid angle over which the plasma is visible. The function is the flux of particles moving with angle to the local vertical, and is the average energy of those particles.…”
Section: Example: a Reactive Ion Etch Modelmentioning
confidence: 99%
“…The values may be selected based on surface evolution data taken from scanning electron micrographs of feature cross-sections. For the most part, this calibration process is ad hoc, and relies heavily on the modeler's expert knowledge of the system; for examples, see [18] and [48]. To our knowledge, only one study has investigated methods to optimize this process systematically [14].…”
Section: Introductionmentioning
confidence: 99%