Optimization of a Compact $I$ –$V$  Model for Graphene FETs: Extending Parameter Scalability for Circuit Design Exploration

Iannazzo, Mario; Muzzo, Valerio Lo; Rodriguez, Saul; Pandey, Himadri; Rusu, Ana; Alarcón, Eduard

doi:10.1109/ted.2015.2479036

Cited by 13 publications

(4 citation statements)

References 30 publications

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“…System design with graphene is currently a chicken-egg problem. There are plenty of device models that allow in principle designing circuits and systems [25], but, as discussed, devices lack the reproducibility and stability. Thus, early design concepts cannot be generalized and standardized.…”

Section: Electric Contactsmentioning

confidence: 99%

Integrating graphene into semiconductor fabrication lines

2019

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Electronic and photonic devices based on the two-dimensional material graphene have unique properties, leading to outstanding performance figures-of-merit. Mastering the integration of this new and unconventional material into an established semiconductor fabrication line represents a critical step for pushing it forward towards commercialization.Silicon has remained the dominating material in microelectronics for more than five decades. Although many semiconductors like Ge, GaAs or InP possess higher charge carrier mobilities, favourable optical properties or other advantages compared to silicon, the simpler production and processing of the latter make it by far the most convenient and cost effective material for large markets.

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Section: Electric Contactsmentioning

confidence: 99%

Integrating graphene into semiconductor fabrication lines

2019

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“…However, due to the difference of structure and transport feature between MOSFET and graphene FETs (GFETs), the model of MOSFET maybe not entirely practicable to GFETs. Some new compact models, for example, based on a drift-diffusion model [41][42][43][44][45] and Boltzman equation [46], have also been developed.…”

Section: Introductionmentioning

confidence: 99%

“…[40] However, due to the difference of structure and transport feature between MOSFET and GFETs, the model of MOSFET maybe not entirely practicable to GFETs. Some new compact models, for example, based on a drift-diffusion model [41][42][43][44][45] and Boltzman equation, [46] have also been developed. Further, some new physical-based compact models, such as surface-potential-based [47,48] and based on density of states (DOS), [49][50][51] have been developed to achieve high accuracy and more physical.…”

Section: Introductionmentioning

confidence: 99%

A review for compact model of graphene field-effect transistors

Wang

et al. 2017

Chinese Phys. B

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Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional silicon devices. As a critical step in the design cycle of modern IC products, compact model refers to the development of models for integrated semiconductor devices for use in circuit simulations. The purpose of this review is to provide a theoretical description of current compact model of graphene field-effect transistors. Special attention is devoted to the charge sheet model, drift-diffusion model, Boltzmann equation, density of states (DOS), and surface-potential-based compact model. Finally, an outlook of this field is briefly discussed.

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“…One is the equivalent parasitic resistance (EPR) method, which regards the contacts as parasitic nonlinear resistors and substitutes them into the circuit to solve the resulting circuit equation [21][22][23][28][29][30][31][32][33]. These equations usually have to be iteratively solved, sacrificing the efficiency.…”

Section: Introductionmentioning

confidence: 99%

Schottky or Ohmic Metal–Semiconductor Contact: Influence on Photocatalytic Efficiency of Ag/ZnO and Pt/ZnO Model Systems

et al. 2013

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The relationship between the contact type in metal-semiconductor junctions and their photocatalytic efficiencies is investigated. Two metal-semiconductor junctions, silver on zinc oxide (Ag/ZnO) and platinum on zinc oxide (Pt/ZnO) serve as model system for Ohmic and Schottky metal-semiconductor contact, respectively. Ag/ZnO, with Ohmic contact, exhibits a higher photocatalytic efficiency than Pt/ZnO, with Schottky contact. The direction of electric fields within the semiconductor is found to play a crucial role in the separation of photogenerated charges, and thus strongly influences the photocatalytic efficiency.

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Optimization of a Compact $I$ –$V$ Model for Graphene FETs: Extending Parameter Scalability for Circuit Design Exploration

Cited by 13 publications

References 30 publications

Integrating graphene into semiconductor fabrication lines

Integrating graphene into semiconductor fabrication lines

A review for compact model of graphene field-effect transistors

Schottky or Ohmic Metal–Semiconductor Contact: Influence on Photocatalytic Efficiency of Ag/ZnO and Pt/ZnO Model Systems

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