Optimization of 193 nm Contact Hole Resists for 100 nm Node.

Abstract

San 136-1, Ami-ri, Bubal-eub, Ichon-si, Korea This paper discusses the 193 nm lithography of contact holes with various pitches for 100 nm node. We have studied 193 nm contact hole resists in view of resist components, process conditions and optical settings. Sidewall roughness was improved by optimizing photoacid generators. Side lobes were eliminated by applying higher post exposure bake temperature or modification of polymers. The influence of optical settings, types of masks and mask bias was discussed with simulation and lithographic results and guidelines for better resolution and iso-dense bias were proposed. The optimized formulation, AZ® AXTM l O50P has a high resolution combined with a large depth of focus and an iso-dense overlap window (130 nm (NA=0.63) DOF 0.38 µm C Exposure latitude 10%).

Comparison of thermal flow and chemical shrink processes for 193 nm contact hole patterning

“…Several polymer platforms have been reported for 193 nm resists, however, methacrylate polymers are commonly used for contact holes due to their high dissolution contrast [9]. For thermal flow process, glass transition temperature and viscosity of the polymers are important and these properties depend on the main chain structure (methacrylate, acrylate or mixture), polydispersity, molecular weight and structures of monomer units.…”

Investigation of surface modifications of 193 and 248nm photoresist materials during low-pressure plasma etching

“…1,2 The decrease of the thickness of 193 nm photoresist materials requires higher plasma etching resistance relative to 248 nm photoresist materials. [5][6][7][8][9][10][11][12][13] In this work, the plasma etching behavior of 193 and 248 nm photoresist is examined in fluorocarbon discharges used for dielectric etching. One issue with 193 nm photoresist materials in plasma etching environments is increased surface roughness as a result of the etch process.…”