“…where E is total system energy, V ij is the contribution to the interaction energy of atoms with numbers i and j, r ij is the distance between atoms with numbers i and j, f C (r) is a cut-off function, f R (r) and f A (r) are the repulsion and attraction potentials, respectively, and R, D, A, B, n, m, λ 1 , λ 2 , λ 3 , β, γ, c, d and cos(θ 0 ) are potential parameters that are selected in order to reproduce the properties of the simulated material. Methods of parametric identification of the Tersoff potential parameters are considered in papers [26,27]. The initial positions of atoms and their number are determined by the structure of the crystal lattice and the restriction on the minimum size of the simulated space is specified by the structure of the potential.…”